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Dive into the research topics where Clemens Fitz is active.

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Featured researches published by Clemens Fitz.


international symposium on vlsi technology, systems, and applications | 2015

Process optimization to reduce NiSi pipes and NiSi agglomeration on 28nm Nickel silicide LSA ms anneal process

Varadharajan Vijayaragavan; Clemens Fitz; Marco Lepper; Ralf Reisdorf; Holub Jan; Van Le; James Willis; Yun Wang; Michael Awdshiew

NiSi pipes are formed on SiGe during conventional (He based) RTA anneal processes in NiSi module due to Ni diffusion. NiSi pipes increase leakage and reduce device Vts. The control of Nickel diffusion is essential for device control. In this paper we use a laser anneal tool at NiSi RTA2 to control Ni diffusion. The formation of NiSi-pipes is studied as a response of process factors, such as laser and chuck temperature, wafer rotation, and dwell time. The high process temperature in the range of 700-950°C can melt NiSi. The onset of NiSi melting as a function of process parameters and layout locations are studied.


Archive | 2011

Methods of Forming Metal Silicide Regions on Semiconductor Devices

Clemens Fitz; Peter Baars; Markus Lenski


Archive | 2014

Aqua Regia and Hydrogen Peroxide HCl Combination to Remove Ni and NiPt Residues

Anh Duong; Clemens Fitz; Olov Karlsson


Archive | 2011

Stabilized Metal Silicides in Silicon-Germanium Regions of Transistor Elements

Stefan Flachowsky; Clemens Fitz; Tom Herrmann


Archive | 2012

METHODS FOR FABRICATING A CMOS INTEGRATED CIRCUIT HAVING A DUAL STRESS LAYER (DSL)

Peter Baars; Marco Lepper; Clemens Fitz


Meeting Abstracts | 2013

Process to Etch Ni and Pt Residues during Silicide Contact Electrode Processing Using Low Temperature Aqueous Solutions

Anh Duong; Clemens Fitz; Sven Metzger; Olov Karlsson; John Clayton Foster; Greg Nowling; Vincent Sih; Paul R. Besser


Archive | 2012

HNO3 SINGLE WAFER CLEAN PROCESS TO STRIP NICKEL AND FOR MOL POST ETCH

Clemens Fitz; Jochen Poth; Kristin Schupke


Archive | 2011

MOSFET INTEGRATED CIRCUIT WITH IMPROVED SILICIDE THICKNESS UNIFORMITY AND METHODS FOR ITS MANUFACTURE

Clemens Fitz; Stephan Waidmann; Stefan Flachowsky; Peter Baars; Rainer Giedigkeit


Archive | 2011

Methods of forming metal silicide regions on semiconductor devices using different temperatures

Thilo Scheiper; Peter Javorka; Stefan Flachowsky; Clemens Fitz


Archive | 2013

Microwave-assisted heating of strong acid solution to remove nickel platinum/platinum residues

Clemens Fitz; Sven Metzger; Paul R. Besser; Vincent Sih; Anh Duong

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