Clemens Fitz
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Featured researches published by Clemens Fitz.
international symposium on vlsi technology, systems, and applications | 2015
Varadharajan Vijayaragavan; Clemens Fitz; Marco Lepper; Ralf Reisdorf; Holub Jan; Van Le; James Willis; Yun Wang; Michael Awdshiew
NiSi pipes are formed on SiGe during conventional (He based) RTA anneal processes in NiSi module due to Ni diffusion. NiSi pipes increase leakage and reduce device Vts. The control of Nickel diffusion is essential for device control. In this paper we use a laser anneal tool at NiSi RTA2 to control Ni diffusion. The formation of NiSi-pipes is studied as a response of process factors, such as laser and chuck temperature, wafer rotation, and dwell time. The high process temperature in the range of 700-950°C can melt NiSi. The onset of NiSi melting as a function of process parameters and layout locations are studied.
Archive | 2011
Clemens Fitz; Peter Baars; Markus Lenski
Archive | 2014
Anh Duong; Clemens Fitz; Olov Karlsson
Archive | 2011
Stefan Flachowsky; Clemens Fitz; Tom Herrmann
Archive | 2012
Peter Baars; Marco Lepper; Clemens Fitz
Meeting Abstracts | 2013
Anh Duong; Clemens Fitz; Sven Metzger; Olov Karlsson; John Clayton Foster; Greg Nowling; Vincent Sih; Paul R. Besser
Archive | 2012
Clemens Fitz; Jochen Poth; Kristin Schupke
Archive | 2011
Clemens Fitz; Stephan Waidmann; Stefan Flachowsky; Peter Baars; Rainer Giedigkeit
Archive | 2011
Thilo Scheiper; Peter Javorka; Stefan Flachowsky; Clemens Fitz
Archive | 2013
Clemens Fitz; Sven Metzger; Paul R. Besser; Vincent Sih; Anh Duong