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Dive into the research topics where Clint Montgomery is active.

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Featured researches published by Clint Montgomery.


international workshop on junction technology | 2006

Nickel SALICIDE Process Technology for CMOS Devices of 90nm Node and Beyond

J.P. Lu; D.S. Miles; J. DeLoach; D.F. Yue; P.J. Chen; T. Bonifield; S. Crank; S.F. Yu; F. Mehrad; Y. Obeng; D.A. Ramappa; D. Corum; R.L. Guldi; Lance S. Robertson; X. Liu; L.H. Hall; Yuqing Xu; B.Y. Lin; A.F.Jr. Griffin; F.S. Johnson; T. Grider; D. Mercer; Clint Montgomery

As CMOS technologies move into the 90 nm node and beyond, nickel (Ni) self-aligned suicide (SALICIDE) is transitioning from R&D into mainstream SC fabrication. In this paper, advantages and challenges of Ni SALICIDE process technology will be reviewed. The extension of Ni SALICIDE technology to fully silicided metal gates (FUSI) will be discussed


Archive | 2004

Semiconductor device having a fully silicided gate electrode and method of manufacture therefor

Haowen Bu; Jiong-Ping Lu; Shaofeng Yu; Ping Jiang; Clint Montgomery


Archive | 2005

Method for manufacturing a semiconductor device having silicided regions

Jiong-Ping Lu; Clint Montgomery; Lindsey H. Hall; Donald S. Miles; Duofeng Yue; Thomas D. Bonifiield


Archive | 2008

METHOD TO FORM CMOS CIRCUITS WITH SUB 50NM STI STRUCTURES USING SELECTIVE EPITAXIAL SILICON POST STI ETCH

Clint Montgomery; Brian K. Kirkpatrick; Weize Xiong; Steven L. Prins


Archive | 2003

Capacitor formed on a recrystallized polysilicon layer and a method of manufacture therefor

Jiong-Ping Lu; Haowen Bu; Clint Montgomery


Archive | 2005

Post plasma clean process for a hardmask

Brian K. Kirkpatrick; Clint Montgomery; Brian M. Trentman; Randall W. Pak


Archive | 2004

Process method to facilitate silicidation

Jiong-Ping Lu; Freidoon Mehrad; Lindsey H. Hall; Vivian Liu; Clint Montgomery; Scott F. Johnson


Archive | 2007

METHODS FOR FULL GATE SILICIDATION OF METAL GATE STRUCTURES

Aaron Frank; David Gonzalez; Mark R. Visokay; Clint Montgomery


Archive | 2005

Method for forming a void free via

Alfred J. Griffin; Adel El Sayed; John Paul Campbell; Clint Montgomery


Archive | 2009

CAPACITOR FORMED ON A RECRYSTALLIZED POLYSILICON LAYER

Jiong-Ping Lu; Haowen Bu; Clint Montgomery

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