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Publication
Featured researches published by Conrad Albert Barile.
reliability physics symposium | 1973
Robert Charles Dockerty; Conrad Albert Barile; Arunachala Nagarajan; S. M. Zalar
The threshold voltage stability of p- and n-channel silicon gate FETs is improved by annealing the gate silicon nitride in oxygen or steam prior to deposition of the silicon gate. Annealing shifts the threshold voltage negatively by 100-200mV, and lowers the normalized transconductance slightly. Field effect mobility, fast surface state density and junction leakage are not affected by the anneal. Formation of a thin layer of SiO2 plus SiOXNy during annealing increases nitride resistivity and reduces the threshold voltage shift due to charge storage at the oxide-nitride interface.
Archive | 1972
Conrad Albert Barile; Robert Charles Dockerty; Arunachala Nagarajan
Archive | 1973
Shakir Ahmed Abbas; Conrad Albert Barile; Ralph David Lane; Peter Tsung-shih Liu
Archive | 1979
Conrad Albert Barile; Goerge R. Goth; James Steve Makris; Arunachala Nagarajan; Raj Kanwal Raheja
Archive | 1976
Conrad Albert Barile; Robert Mark Brill; John Lawrence Forneris; Joseph Regh
Archive | 2005
Du B. Nguyen; Birendra N. Agarwala; Conrad Albert Barile; Jawahar P. Nayak; Hazara S. Rathore
Archive | 2005
Du B. Nguyen; Birendra N. Agarwala; Conrad Albert Barile; Jawahar P. Nayak; Hazara S. Rathore
Archive | 2008
Kaushik Chanda; Hazara S. Rathore; Paul S. McLaughlin; Robert D. Edwards; Lawrence A. Clevenger; Andrew P. Cowley; Chih-Chao Yang; Conrad Albert Barile
Archive | 1980
Conrad Albert Barile; George Richard Goth; James Steve Makris; Arunachala Nagarajan; Raj Kanwal Raheja
Archive | 1980
Conrad Albert Barile; George Richard Goth; James Steve Makris; Arunachala Nagarajan; Raj Kanwal Raheja
