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Publication
Featured researches published by Robert Charles Dockerty.
IEEE Transactions on Electron Devices | 1975
Robert Charles Dockerty; S.A. Abbas; C.A. Barile
n-channel and p-channel silicon-gate FETs are fabricated using a 300-Å SiO<inf>2</inf>-300-Å Si<inf>3</inf>N<inf>4</inf>gate insulator. These devices have low leakage and are suitable for dynamic FET-memory applications. Very low n-channel leakage is achieved by using an n- or p-doped polycrystalline-silicon field shield. One-device dynamic memory cells exhibit long average retention times: 158 s for the n-channel cell and 34 s for the p-channel cell. An oxygen or steam anneal of the Si<inf>3</inf>N<inf>4</inf>is necessary to prevent a large V<inf>t</inf>shift during bias-temperature stress.
reliability physics symposium | 1973
Robert Charles Dockerty; Conrad Albert Barile; Arunachala Nagarajan; S. M. Zalar
The threshold voltage stability of p- and n-channel silicon gate FETs is improved by annealing the gate silicon nitride in oxygen or steam prior to deposition of the silicon gate. Annealing shifts the threshold voltage negatively by 100-200mV, and lowers the normalized transconductance slightly. Field effect mobility, fast surface state density and junction leakage are not affected by the anneal. Formation of a thin layer of SiO2 plus SiOXNy during annealing increases nitride resistivity and reduces the threshold voltage shift due to charge storage at the oxide-nitride interface.
Archive | 1975
Shakir Ahmed Abbas; Robert Charles Dockerty; Michael Robert Poponiak
Archive | 1996
Robert Charles Dockerty; Ronald Maurice Fraga; Ciro Neal Ramirez; Sudipta K. Ray; Charles L. Reynolds; Gordon Jay Robbins
Archive | 1972
Conrad Albert Barile; Robert Charles Dockerty; Arunachala Nagarajan
Archive | 1977
Shakir Ahmed Abbas; Robert Charles Dockerty
Archive | 1998
Robert Charles Dockerty; Ronald Maurice Fraga; Ciro Neal Ramirez; Sudipta K. Ray; Gordon Jay Robbins
Archive | 1981
Francisco H. De La Moneda; Robert Charles Dockerty
Archive | 1981
Robert Charles Dockerty
Archive | 1975
Shakir Ahmed Abbas; Robert Charles Dockerty