Ekkehard Pruefer

Semiconductor device including semiconductor regions having differently strained channel regions and a method of manufacturing the same

TRENCH ISOLATION STRUCTURE FOR A SEMICONDUCTOR DEVICE WITH REDUCED SIDEWALL STRESS AND A METHOD OF MANUFACTURING THE SAME

METHOD FOR REDUCING SILICIDE DEFECTS BY REMOVING CONTAMINANTS PRIOR TO DRAIN/SOURCE ACTIVATION

Halbleiterelement mit Halbleitergebieten, die unterschiedlich verformte Kanalgebiete aufweisen, und Verfahren zur Herstellung des Halbleiterelements

Semiconductor component e.g. field-effect transistor, producing method, involves forming endowed region in semiconductor region, covering semiconductor region by dielectric layer, and forming victim coating on semiconductor region

Method for production of integrated circuits, involves building dielectric coating over substrate, which has gate electrode formed over active area and is separated by gate isolation layer

A method for reducing Siliziddefekten by removing contaminants prior to the drain / source activation

Verfahren zur Herstellung einer Drain/Source-Erweiterungsstruktur eines Feldeffekttransistors mit reduzierter Bordiffusion und Transistor A process for preparing a drain / source extension structure of a field effect transistor with a reduced boron diffusion and transistor

Grabenisolationsstruktur für ein Halbleiterbauelement mit reduzierter Seitenwandverspannung und Verfahren zur Herstellung desselben Of the same grave isolation structure for a semiconductor device with reduced side wall bracing and methods for making

Verfahren zur Herstellung eines Halbleiterbauelements mit Isolationsgraben mit reduzierter Seitenwandverspannung A process for producing a semiconductor device with isolation trench with a reduced side wall bracing