En-Hsiang Yeh

High-performance integrated fan-out wafer level packaging (InFO-WLP): Technology and system integration

Integrated fan-out wafer-level packaging (InFO-WLP) technology with state-of-the-art inductors (quality factor of 42 and self-resonance frequency of 16 GHz) has been demonstrated for heterogeneous integration of digital and radio frequency (RF) systems. InFO-WLP promises superior form factor, pin count, and thermal performance to existing flip-chip ball grid array (FC-BGA) packages. In addition, InFO-WLPs high Q inductors can enhance electrical performance and lower power consumption in RF circuit applications.

Array antenna integrated fan-out wafer level packaging (InFO-WLP) for millimeter wave system applications

Array antenna integrated with RF chip using InFO-WLP technology is proposed for millimeter wave system applications. Aperture-coupled patch antenna is designed on the fan-out molding compound (MC). The performance of single-element antenna is evaluated first and proved to have 5 dBi of gain. Meanwhile, the interconnect from chip to antenna feeding line is demonstrated to only have 0.7 dB loss, which can save 19 % PA output power compared with that of flip-chip package. Finally, the system performance of 4 × 4 antenna array integrated with RF chip on the InFO structure shows 14.7 dBi of array gain in a small form factor of 10 × 10 × 0.5 mm3.

300mm size ultra-thin glass interposer technology and high-Q embedded helical inductor (EHI) for mobile application

The first publication on fabrication of a 300 mm size, 50 μm ultra-thin glass interposer is presented. According to measured data and modeling analysis, merits of on-glass inductors and transmission lines outperform those of on-silicon in Q-factor, power dissipation, and power/signal integrity. Glass interposer is a promising building block technology for future hybrid mixed signal heterogeneous chip integration solution.

Power saving and noise reduction of 28nm CMOS RF system integration using integrated fan-out wafer level packaging (InFO-WLP) technology

An integration of 28 nm CMOS RF system with 3D solenoidal inductors (3DSI) in integrated fan-out (InFO) wafer level package technology is studied. The 3DSI provides the performance of Q-factor of 51 and isolation of -53 dB. With the 3DSI, the RF system in the InFO technology results in power saving by 58% and noise reduction by 80% in LNA and VCO, respectively, compared with those in RF SoC system. The InFO technology provides a novel solution for RF system integration.