G. V. Chukov

Development perspectives for radiation-hard shf transmit/receive LSI's for applications of SOI CMOS technology

The present paper concerns the study of SOI MOS transistors RF performance for 0.35-μm domestic digital SOI CMOS technology. A specialized library of RF elements and comprehensive set of SOI RF IP-blocks, including mixers, VCOs, amplifiers, ADC, PLL and frequency divider have been designed and measured. The possibility to design radiation-hard RF transceiver LSIs based on the domestic SOI CMOS technology is confirmed as per the total dose, dose rate and SEE testing results.

System-on-chip: Specifics of radiation behavior and estimation of radiation hardness

The analysis results of typical radiation faults of the system-on-chip have been presented. The specifics of digital, analog-to-digital (mixed), and microwave system-on-chip are considered. A set of the basic parameters-criteria for the radiation hardness of system-on-chip of various classes is determined. Methodical and technical designs for controlling the operability of the System-on-chip by carrying out radiation tests are proposed.

SEE Testing Results for RF and Microwave ICs

A short overview of single event effects for a variety of RF and microwave ICs is presented. New results obtained at the SPELS test center have been used along with published data.

Single event effects in RF and microwave ICs

The present paper presents an overview and an analysis of single event effects (SEE) for a variety of RF and microwave ICs. New SEE test results obtained at the NRNU MEPhI test center have been used along with the published data.

Total Ionizing Dose Effects in Phase-Locked Loop ICs and Frequency Synthesizers

This paper presents a brief overview of total ionizing dose effects for a variety of PLL ICs and PLL-based frequency synthesizer implemented in commercial bulk CMOS, silicon-on-insulator CMOS, BiCMOS and SiGe BiCMOS technology processes with frequency range up to 8 GHz. Total dose sensitivity data of PLL ICs have been obtained at the SPELS test center, based on comprehensive parametric and functional control.

Simulation of IC-packages for RF and MW applications

A new approach to characterization of IC-packages for RF and microwave applications based on electromagnetic simulation and vector measurements is presented. Following the approach the equivalent-circuit parameters and maximum working frequency have been evaluated for a variety of metal-ceramic and metal-glass packages produced domestically.

Long-Term Transient Radiation Effects in SOI CMOS RF ICs

This paper presents the study of transient radiation effects in SOI CMOS RF ICs and discrete MOS transistors. Experiments show that the sensitivity of SOI RF ICs (gain blocks, mixers, VCO etc.) to transient irradiations (dose rate) is mainly determined by the transient response of RF characteristics i.e. output power, output frequency, power / conversion gain, rather than supply transient photocurrent. SOI VCO demonstrates a minimal threshold dose rate (upset-free level) below than 109 rad(Si)/s, limited by the output frequency variations of ±20% and recovery time up to 100 μs with a maximum dose rate of 5×1012 rad(Si)/s. It is also shown that the long-term transient recovery of the RF characteristics and super-linear dependence of the supply photocurrent vs dose rate are the dominating transient radiation effects in SOI CMOS RF ICs.

New approach to dose rate testing of MW ICs based on heterostructures

The present paper concerns some testing peculiarities for GaAs MW ICs based on heterostructures in the context of ionizing pulse radiation effect. Comparative analysis of experimental results achieved using a small-size pulsed accelerator and a pulse laser source with a variable wavelength is performed. The parameters of laser radiation that ensure adequate simulation of dose rate effects are determined.

Small-signal optimization approach to design of microwave signal switch ICs on MOS transistors

This paper presents a technique for optimizing small-signal parameters of monolithic microwave signal switches on MOS transistors. The technique is based on analytical expressions and visual plots that allow us to determine the topological sizes of transistors providing the optimal values of insertion losses and isolation (decoupling). The effect of the parasitic inductance of connecting bondwires on the characteristics of signal switches is investigated; it is shown that parasitic inductance has a minor effect on insertion losses and reflection losses, but causes severe degradation of isolation. Based on the proposed technique, an IP block for a monolithic microwave switch, which can be used as an antenna switch or a composite functional block in multibit step phase shifters and S- or C-band attenuators, is designed. The comparative results of the numerical simulation and experimental investigation of the 0.25 µm CMOS IP block are presented; at the frequency of 1 GHz, the block has an upper linearity bound of at least +17 dBm, insertion losses of not more than 0.6 dB, and isolation not worse than -37 dB.