V. V. Elesin

Development perspectives for radiation-hard shf transmit/receive LSI's for applications of SOI CMOS technology

The present paper concerns the study of SOI MOS transistors RF performance for 0.35-μm domestic digital SOI CMOS technology. A specialized library of RF elements and comprehensive set of SOI RF IP-blocks, including mixers, VCOs, amplifiers, ADC, PLL and frequency divider have been designed and measured. The possibility to design radiation-hard RF transceiver LSIs based on the domestic SOI CMOS technology is confirmed as per the total dose, dose rate and SEE testing results.

System-on-chip: Specifics of radiation behavior and estimation of radiation hardness

The analysis results of typical radiation faults of the system-on-chip have been presented. The specifics of digital, analog-to-digital (mixed), and microwave system-on-chip are considered. A set of the basic parameters-criteria for the radiation hardness of system-on-chip of various classes is determined. Methodical and technical designs for controlling the operability of the System-on-chip by carrying out radiation tests are proposed.

Design of passive elements for monolithic silicon-germanium microwave ICs tolerant to ionizing radiation

Techniques for the design of passive elements for monolithic silicon-germanium microwave ICs, tolerant to ionizing radiation have been developed with regard to specific features of the design of microwave passive elements on conducting silicon substrates. A set of the elements for operation at frequencies up to 24 GHz has been designed and fabricated, which includes transmission lines, inductances, and symmetrical transformers for application in a user library for the silicon-germanium BiCMOS technology with design rules of 0.25 μm.

SEE Testing Results for RF and Microwave ICs

A short overview of single event effects for a variety of RF and microwave ICs is presented. New results obtained at the SPELS test center have been used along with published data.

Single event effects in RF and microwave ICs

The present paper presents an overview and an analysis of single event effects (SEE) for a variety of RF and microwave ICs. New SEE test results obtained at the NRNU MEPhI test center have been used along with the published data.

Behavioral approach to design universal UHF RFID reader transceiver ICs

The proliferation of RFID applications motivates an integrated solution to decrease the size and cost of readers. This paper describes a behavioral approach to design of worldwide regulation compliant UHF RFID reader transceiver for ISO 18000-6 multi-class tags in the ISM band 860 MHz-960 MHz. The approach based on evaluation of the transceivers building blocks parameters (Dynamic Range, Noise Figure, Sensitivity, P1dB, Phase Noise etc.) in conjunction with required characteristics of complete RFID reader system, i.e. read range, data transmission rate, reading speed, and power consumption etc. Based on direct-conversion architecture, the reader transceiver integrates RF-blocks, frequency synthesizer, modulation and demodulation functions, low frequency analog baseband. Fabricated on a 0.42/0.25 um SiGe BiCMOS process, the transceiver is implemented in LTCC-module and produces output power of +17 dBm; the receiver sensitivity is down to - 85 dBm.

The circuit and functional blocks for radiation-hard transceiver LSICs in SOI CMOS

The results of designing a set of basic circuit and functional blocks (amplifying, oscillating, mixing, etc.) to construct the radiation-hard transceiver CMOS Silicon-on-Insulator (SOI) large-scale integration circuits (LSICs) are presented. It was established experimentally that the test chips of the circuit and functional blocks (CFBs) produced by domestic CMOS SOI technologies at a feature size of 0.35 µm are functionally operable in the frequency range of 1 MHz to 1.8 GHz, and the values of the main parameters are close to the calculated ones. The results of the experimental research on the hardness of the developed CFBs to pulse and dose impact of ionizing radiation are presented and the hardness levels were evaluated.

Radiation effects in phase-locked loop

An analysis of total dose and dose rate effects in phase-locked loop (PLL) ICs is presented. New radiation hardness test results for a variety of commercial and experimental PLL ICs are obtained.

Total Ionizing Dose Effects in Phase-Locked Loop ICs and Frequency Synthesizers

This paper presents a brief overview of total ionizing dose effects for a variety of PLL ICs and PLL-based frequency synthesizer implemented in commercial bulk CMOS, silicon-on-insulator CMOS, BiCMOS and SiGe BiCMOS technology processes with frequency range up to 8 GHz. Total dose sensitivity data of PLL ICs have been obtained at the SPELS test center, based on comprehensive parametric and functional control.

Long-Term Transient Radiation Effects in SOI CMOS RF ICs

This paper presents the study of transient radiation effects in SOI CMOS RF ICs and discrete MOS transistors. Experiments show that the sensitivity of SOI RF ICs (gain blocks, mixers, VCO etc.) to transient irradiations (dose rate) is mainly determined by the transient response of RF characteristics i.e. output power, output frequency, power / conversion gain, rather than supply transient photocurrent. SOI VCO demonstrates a minimal threshold dose rate (upset-free level) below than 109 rad(Si)/s, limited by the output frequency variations of ±20% and recovery time up to 100 μs with a maximum dose rate of 5×1012 rad(Si)/s. It is also shown that the long-term transient recovery of the RF characteristics and super-linear dependence of the supply photocurrent vs dose rate are the dominating transient radiation effects in SOI CMOS RF ICs.