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Publication
Featured researches published by Gangadhara S. Mathad.
Process, equipment, and materials control in integrated circuit manufacturing. Conference | 1999
George A. Kaplita; Stefan Schmitz; Rajiv M. Ranade; Gangadhara S. Mathad
The planarization and recessing of polysilicon to form a plug are processes of increasing importance in silicon IC fabrication. While this technology has been developed and applied to DRAM technology using Trench Storage Capacitors, the need for such processes in other IC applications (i.e. polysilicon studs) has increased. Both planarization and recess processes usually have stringent requirements on etch rate, recess uniformity, and selectivity to underlying films. Additionally, both processes generally must be isotropic, yet must not expand any seams that might be present in the polysilicon fill. These processes should also be insensitive to changes in exposed silicon area (pattern factor) on the wafer. A SF6 plasma process in a polysilicon DPS (Decoupled Plasma Source) reactor has demonstrated the capability of achieving the above process requirements for both planarization and recess etch. The SF6 process in the decoupled plasma source reactor exhibited less sensitivity to pattern factor than in other types of reactors. Control of these planarization and recess processes requires two endpoint systems to work sequentially in the same recipe: one for monitoring the endpoint when blanket polysilicon (100% Si loading) is being planarized and one for monitoring the recess depth while the plug is being recessed (less than 10% Si loading). The planarization process employs an optical emission endpoint system (OES). An interferometric endpoint system (IEP), capable of monitoring lateral interference, is used for determining the recess depth. The ability of using either or both systems is required to make these plug processes manufacturable. Measuring the recess depth resulting from the recess process can be difficult, costly and time- consuming. An Atomic Force Microscope (AFM) can greatly alleviate these problems and can serve as a critical tool in the development of recess processes.
Archive | 1994
Louis L. Hsu; Gangadhara S. Mathad; Rajiv V. Joshi
Archive | 1996
Panayotis C. Andricacos; Madhav Datta; Hariklia Deligianni; Wilma Jean Horkans; Sung Kwon Kang; Keith T. Kwietniak; Gangadhara S. Mathad; Sampath Purushothaman; Leathen Shi; Ho-Ming Tong
Archive | 1984
Pieter Geldermans; Gangadhara S. Mathad
Archive | 1984
Lee Chen; Charles J. Hendricks; Gangadhara S. Mathad; Stanley John Poloncic
Archive | 1986
Lee Chen; Gangadhara S. Mathad
Archive | 1984
Lee Chen; John R. Lankard; Gangadhara S. Mathad
Archive | 1983
Lee Chen; Tung J. Chuang; Gangadhara S. Mathad
Archive | 1985
Lee Chen; Gangadhara S. Mathad
Archive | 1985
Lee Chen; Gangadhara S. Mathad