Subhash B. Kulkarni

Yield improvement for a 3.5-ns BiCMOS technology in a 200-mm manufacturing line

Various issues pertinent to producing high volumes of a high-end BiCMOS technology in a 200-mm manufacturing line are described. The technology consists of a baseline 0.8- mu m CMOS process with four levels of metal and 0.45- mu m L/sub eff/ FETs, to which has been added a boron-implanted precision resistor, a 14-GHz vertical NPN with As-doped polysilicon, and an antimony-doped subcollector. Chips fabricated in the technology include a 3.5-ns 576 K BiCMOS SRAM and a 200 K BiCMOS gate array with a 180-ps gate delay. Yield detractors unique to the integration of the BiCMOS elements are discussed and solutions presented. In particular, collector-emitter shorts, a spurious polysilicon filament, management of the critical emitter window image, and modulation of the titanium silicide/silicon interfacial resistance are considered.<<ETX>>

Optimization of a High-Volume 200-mm BiCMOS Manufacturing Line

Terence Hook, Bomy Chen, Gorden Starkey, Arup Bhattacharyya, Margaret Faucher, Carol Racine, Christa Willets, Steven Eslinger, Subhash Kulkarni, William King, Carol Washburn, Joseph Piccirillo, Steven Mongeon, Arthur Johnson, Edward Gabrielle IBM Technology Products Essex Junction, VT 05452, USA Several issues relevant to yield improvement in a highvolume production of a high-end BiCMOS technology in a 200-mm manufacturing line are described. The baseline technology is a 0.8-pm CMOS process with four levels of metal and 0.45-pm Le, FETs. To this has been added a boron-implanted precision resistor, a 14-GHz vertical NPN with an As-doped polysilicon emitter, and an antimonydoped subcollector. Products fabricated in the technology include a 3.5-ns 576K BiCMOS SRAM and a 200K BiCMOS gate array with a 180-ps gate delay. Yield detractors unique to the integration of the BiCMOS elements are discussed and solutions presented. In particular, collector-emitter shorts, bipolar beta control, an oxide pinhole defect, and control of the titanium silicide sheet resistance are considered.