Glyn Reynolds

Film properties of Ti/TiN bilayers deposited sequentially by ionized physical vapor deposition

Ionized physical vapor deposition (iPVD) has received much attention as a method for depositing material at the bottom and on the sidewalls of the high aspect ratio features proposed for sub-0.25 micron integrated circuits. In this article, we describe the film properties of Ti/TiN bilayers deposited sequentially using the iPVD technique. The experimental configuration consisted of a planar magnetron sputtering source in combination with an inductively coupled RF plasma. TiN was reactively sputtered from a titanium target which remained non-nitrided throughout the deposition, a process commonly referred to in non-ionized PVD as operating in the non-nitrided mode (NNM). These films were analyzed by cross-sectional scanning electron microscopy and transmission electron microscopy, automated four-point sheet resistance probe, x-ray diffraction, x-ray fluorescence, stress gauge, and Rutherford backscattering. Highly oriented 〈111〉 TiN was observed on 〈002〉 oriented Ti underlayers. At via aspect ratios of 4:1 ...