H. J. Mattausch

A Reliability-Enhanced TCAM Architecture with Associated Embedded DRAM and ECC

This paper describes a novel TCAM architecture designed for enhancing the soft-error immunity. An associated embedded DRAM and ECC circuits are placed next to TCAM macro to implement a unique methodology of recovering upset bits due to soft errors. The proposed configuration allows an improvement of soft-error immunity by 6 orders of magnitude compared with the conventional TCAM. We also propose a novel testing methodology of the soft-error rate with a fast parallel multi-bit test. In addition, the proposed architecture resolves the critical problem of the look-up table maintenance of TCAM. The design techniques reported in this paper are especially attractive for realizing soft-error immune, high-performance TCAM chips.

Benchmarking of a surface potential based organic thin-film transistor model against C 10 -DNTT high performance test devices

In this paper, a surface potential based compact model for organic thin-film transistors (OTFTs) including both tail and deep trap states across the band gap is presented and benchmarked against measured data from high-performance dinaphtho thieno thiophene (C10-DNTT) based test devices. This model can accurately describe the OTFT test-structure current from week to strong inversion regime.

HiSIM-SOI: Complete surface-potential-based model valid for all SOI-structure types

The compact SOI-MOSFET model HiSIM-SOI based on the complete surface-potential description is presented. The model considers all possible charges induced in the device for the formulation of the Poisson equation, which is solved iteratively. Thus HiSIM-SOI is valid for any structural variations from thick to extremely thin SOI or BOX layers. The dynamic depletion between the fully and partially depleted conditions is well reproduced. It is also demonstrated that the floating-body effect can be accurately captured by considering the accumulated charge in the SOI layer for the solution of the Poisson equation. HiSIM-SOI is verified to correctly reproduce 2D-device simulation results automatically for different SOI-structure types without any additional option setting.

Universal properties and compact modeling of dynamic hot-electron degradation in n-MOSFETs

A compact model for the n-MOSFET degradation is developed based on the trap-density increase, which is extracted from the measured 1/f noise characteristics. The trap density is explicitly included in the Poisson equation, which is solved within the framework of HiSIM. The measured real-time dynamic degradation of the I-V characteristics is successfully reproduced with this compact modeling approach. A further important advantage of the developed compact degradation model is the negligible cost in additional circuit-simulation time.

Modeling of 2D bias control in overlap region of high-voltage MOSFETs for accurate device/circuit performance prediction

High-voltage MOSFETs enable wide biasrange applications realized only by optimizing the device structure. We have developed the compact model HiSIM_HV 2.0.0, based on the potential distribution in the device, which is useful for both device and circuit optimizations. By considering two device-structure dependent potentials, the internal node potential within the high resistive drift region and the potential underneath the gate overlap region, the model can reproduce I–V characteristics for a wide range of structure variations without additional fitting parameters.

Modeling of electrostatically actuated fluid flow system for mixed-domain simulation

Modeling of an electrically driven fluid flow system for multi-domain simulation is reported. The electrically driven actuator force is considered by an actuator component model, based on a spring-mass-damper system with force balance formulation. The fluid flow model is developed on the basis of a Kirchhoffian network which is derived from the mass transport equation. The actuator and the fluid models are coupled through equivalent circuits, leading to a consistent approach of mixed-domain system simulation. This approach is applied to design a flexible blood pumping system where the blood flow is driven by electrical organic actuators. Modeled results are compared with 2D device simulation based on the finite element method.

Compact modeling of GaN HEMT based on device-internal potential distribution

A compact model of GaN HEMT is developed, which solves the Poisson equations explicitly. The model includes all possible charges induced within the device including the trap density. It is verified that the model can reproduce all 2D-device simulation results accurately. In particular, the operation frequency dependence of the current collapse can also be captured accurately by adjusting the trap time constant.

Compact modeling of carrier trapping for accurate prediction of frequency dependent circuit operation

We have investigated the influence of carrier traps on device characteristics in TFTs. In particular, our focus was given on transient characteristics influenced by carrier trapping during device operations. A compact model for circuit simulation of TFTs has been developed by considering the time constant of the trapping. The model was verified with measured frequency dependent TFT characteristics.

Organic thin-film transistor compact model with accurate charge carrier mobility

A physical compact charge carrier mobility model for undoped-body organic thin-film transistors (OTFTs) based on an analysis of the bias-dependent Fermi-energy movement in the band gap is reported. Mobility in localized- and extended-energy states predicts the current transport in week- and strong-inversion regimes, respectively. A hopping mobility model as a function of surface potential is developed to describe the carrier transport through localized trap states located in the band gap. The Poole-Frenkel field effect mechanism is considered to interpret the band-like carrier transport mechanism in extended energy states. Modeled results are compared with the measured DNTT-based high-performance OTFTs data to verify the model.

Consistent dynamic depletion model of SOI-MOSFETs for device/circuit optimization

We report the potential-based SOI-MOSFET model HiSIM-SOI, which solves the three surface potentials of the SOI-device accurately without sacrificing simulation time. The model implements the bias dependent dynamic depletion behavior, shifting between partially-depleted (PD) and fully-depleted (FD) conditions smoothly. It is also demonstrated that the floating-body effect can be accurately captured in a simple way from the calculated surface potentials without the necessity of introducing on additional node. HiSIM-SOI is also verified to correctly reproduce measured data of both body-contact and floating-body devices.