Hideki Genjo
Mitsubishi
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Publication
Featured researches published by Hideki Genjo.
IEEE Transactions on Electron Devices | 1991
Yoshinori Okumura; Tatsuya Kunikiyo; Ikuo Ogoh; Hideki Genjo; Masahide Inuishi; Masao Nagatomo; Takayuki Matsukawa
A newly developed gate/n/sup -/ overlapped LDD MOSFET was investigated. The MOSFET was fabricated by an oblique rotating ion implantation technique. A formula for the impurity ion profile was derived to analyze the lowering of substrate current and improvement of the degradation caused by the hot-carrier effect of the MOSFET. It was proved that the impurity ion profile near the drain edge is remarkably graded in the directions along channel and toward substrate even just after the implantation, so that the maximum lateral electric field is relaxed as compared with conventional LDD MOSFETs. Also, the maximum point of the lateral electric field at the drain edge is located apart from the main path of the channel current. >
Archive | 1990
Hideaki Arima; Yoshinori Okumura; Hideki Genjo; Ikuo Ogoh; Kohjiroh Yuzuriha; Yuichi Nakashima
Archive | 1990
Masazumi Matsuura; Hideo Kotani; Atsuhiro Fujii; Shigeo Nagao; Hideki Genjo
Archive | 1989
Atsuhiro Fujii; Toshihiko Minami; Hideki Genjo
Archive | 1992
Masazumi Matsuura; Hideo Kotani; Atsuhiro Fujii; Shigeo Nagao; Hideki Genjo
Archive | 1992
Hideaki Arima; Yoshinori Okumura; Hideki Genjo; Ikuo Ogoh; Kohjiroh Yuzuriha; Yuichi Nakashima
Archive | 1998
Shigeru Shiratake; Hideki Genjo; Yasuhiro Ido; Atsushi Hachisuka; Koji Taniguchi
Archive | 1989
Yoshinori Okumura; Takayuki Matsukawa; Ikuo Ogoh; Masao Nagatomo; Hideki Genjo; Atsushi Hachisuka
Archive | 1998
Shigeru Shiratake; Hideki Genjo; Yasuhiro Ido; Atsushi Hachisuka; Koji Taniguchi
Archive | 1999
Eiji Hasunuma; Hideki Genjo; Shigeru Shiratake; Atsushi Hachisuka; Koji Taniguchi
