Masao Nagatomo
Mitsubishi
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Publication
Featured researches published by Masao Nagatomo.
IEEE Transactions on Electron Devices | 1991
Yoshinori Okumura; Tatsuya Kunikiyo; Ikuo Ogoh; Hideki Genjo; Masahide Inuishi; Masao Nagatomo; Takayuki Matsukawa
A newly developed gate/n/sup -/ overlapped LDD MOSFET was investigated. The MOSFET was fabricated by an oblique rotating ion implantation technique. A formula for the impurity ion profile was derived to analyze the lowering of substrate current and improvement of the degradation caused by the hot-carrier effect of the MOSFET. It was proved that the impurity ion profile near the drain edge is remarkably graded in the directions along channel and toward substrate even just after the implantation, so that the maximum lateral electric field is relaxed as compared with conventional LDD MOSFETs. Also, the maximum point of the lateral electric field at the drain edge is located apart from the main path of the channel current. >
Archive | 1989
Tatsuya Ishii; Yoji Mashiko; Masao Nagatomo; Michihiro Yamada
Archive | 1991
Masao Nagatomo; Hiroki Shimano; Tomonori Okudaira; Yoshinori Okumura
Archive | 1992
Kaoru Motonami; Masao Nagatomo
Archive | 1989
Masao Nagatomo
Archive | 1988
Yoshinori Okumura; Atsuhiro Fujii; Masao Nagatomo; Hiroji Ozaki; Wataru Wakamiya; Takayuki Matsukawa
Archive | 1993
Ikuo Ogoh; Masao Nagatomo
Archive | 1988
Tatsuya Ishii; Yoshinori Okumura; Masao Nagatomo
Archive | 1989
Tatsuya Ishii; Yoshinori Okumura; Masao Nagatomo
Archive | 1988
Shinichi Satoh; Makoto Hirayama; Masao Nagatomo; Ikuo Ogoh; Yoshikazu Ohno; Masato Fujinaga
