Hong-Sik Yoon

Thermally Robust Multi-layer Non-Volatile Polymer Resistive Memory

The feasibility of the charge-transfer based polymer resistive memory as a future data storage device was tested using a thermally robust polyimide and PCBM composite film, available by low-cost solution processing. The prototype device with a simple 4F cross-point cell structure demonstrated basic non-volatile memory functions (> 1000 write/erase cycles and 1-week data retention in an ambient without encapsulation). Not only bi-polar but also uni-polar operation scheme with multi-level programming worked for the device. The cells on both the top and the bottom layers of a stacked device with additional heat budget of > 300 degC for 1 hour exhibited no degradation on the performance