Hsiao-Tsung Yen

TSV RF de-embedding method and modeling for 3DIC

TSV (Thru-Silicon-Via) for 3D packaging technique is a further passive component, for connecting two dies by stacking. RF characteristics of TSV with modeling up to 50GHz are presented in this paper, where a L-2L de-embedding method (double delay) is in use, which is the first applied for TSV on-wafer measurement. Furthermore, a new T-model is proposed for modeling a single TSV of 28nm CMOS process.

An extended de-embedding method for on-wafer components

On-wafer de-embedding method has been proposed for different method up to millimeter-wave (mm-wave) frequency range. An extended de-embedding method for on wafer devices up to 65 GHz is proposed. Using Vertical connection of L-2L (VL2L) is presented in this paper, with a calibrated loss tangent value in mm-wave. It shows significant good and accurate results for on-wafer modeling up to 65 GHz. VL2L are considered to be a good method for different kind of devices, such as capacitors. Also, the results by different CMOS process and EM simulation are with good agreement.