J.-F. Carpentier

Thermally stable oscillator at 2.5 GHz using temperature compensated BAW resonator and its integrated temperature sensor

This paper presents a miniaturized 2.5GHz frequency source based on compensated BAW resonator with its integrated temperature molybdenum sensor assembled on the differential Colpitts oscillator. The presence of silicon dioxide layer having a positive temperature coefficient compared to other layers is used to reduce the resonators drift. A demonstration oscillator achieves a frequency drift of 40 ppm over a temperature range from -35degC to +85degC. The oscillators phase noise of -94dBc/Hz at 2 KHz offset from the carrier is reported.

Recent progress in Silicon Photonics R&D and manufacturing on 300mm wafer platform

A low cost 28Gbits/s Silicon Photonics platform using 300mm SOI wafers is demonstrated. Process, 3D integration of Electronic and Photonic ICs, device performance, circuit results and low cost packaging are discussed.

Temperature compensated BAW resonator and its integrated thermistor for a 2.5GHz electrical thermally compensated oscillator

This paper presents a miniaturized 2.5 GHz frequency source based on compensated BAW resonator with its integrated temperature molybdenum sensor assembled on the differential Colpitts oscillator. The presence of silicon dioxide layer having a positive temperature coefficient compared to other layers is used to reduce the resonators drift. A demonstration oscillator achieves a frequency drift of 40 ppm over a temperature range from −35°C to +85°C. The oscillators phase noise of −113 dBc/Hz at 10 kHz offset from the carrier is reported at 2.5 GHz.

Coupled Resonator Filters for W-CDMA Duplexer Application

This work presents the design and the measured performances of a duplexer based on bulk acoustic wave coupled resonator filter (BAW CRF) for W-CDMA application. This device is dedicated to be integrated in a RF module for cellular phone. A co-simulation methodology between a 1D acoustic model (Mason-type) and an electromagnetic solver is developed to allow a good prediction of the filter response on a large frequency range. The minimum insertion loss for the Tx and Rx filter is better than -3 dB and the isolation between Tx and Rx ports is greater than 60 dB. The rejection of the Tx filter is better than -50 dB in the Rx frequency range and is up to -67 dB in the Tx frequency range. The CRFs handle up to 27 dBm at Tx center frequency.

20Gb/s PAM-4 transmission from 35 to 90°C by modulating a Silicon Ring Resonator Modulator with 2Vpp

A PAM-4 transmission is established by modulating a Si-RRM with a 2Vpp driving voltage. A 20Gb/s bit-rate is achieved with an 8GHz bandwidth, and maintained while the Si-chip temperature is varied from 35 to 90°C.

MEMS resonator temperature compensation

This paper presents the study of an electromechanical resonator temperature compensation principle. It consists in the use of a coating material presenting opposite properties over temperature compared to the silicon resonator structural material. Simulated results, using the FEM Coventor® software, show the great potential of this CMOS compatible principle for industrial perspectives.

3D Multi-Frequency MEMS Electromechanical Resonator Design

Microelectromechanical Systems (MEMS) are intensivly studied since many years due to their high potential performances and their integration possibilities. In particular, electromechanical resonators realized at the CMOS level could allow the emergence of integrated multi-frequency architectures suitable for future multiband wireless communication devices that might require many reference frequencies to address multiple communication standards. This paper presents a new 3D multi-frequency MEMS resonator design based on Lamé-mode plate resonators. Mechanisms and Finite Element Modeling (FEM) simulations are detailed. The Silicon on Nothing process (SoN) can be used to realize such 0-stress 3D structures.

Nonlinear Behavior of CRF Device at High Power Level

This paper investigates the nonlinear behavior of CRF filters. First, measurements carried out on stand-alone resonators underline the impact of resonator size and loading layer thickness on linearity. Then, a comparison between a BAW filter and a CRF filter is presented regarding second order nonlinearities. Finally, the nonlinear behavior of CRF filters at high power levels has been investigated through co-integration of the CRF with a silicon PA in order to evaluate its impact in a WCDMA application.

Full-Duplex Receiver And PA Integration With BAW Devices

To go further into integration and to understand parasitic coupling mechanisms in RF integrated circuits, this article describes an RF front-end direct conversion receiver co-integrated with a differential power amplifier (PA). It uses dedicated filtering functions based on bulk acoustic wave (BAW) technology. This circuit performs a prototype of complete transceiver which has been designed to address WCDMA FDD standard. It is realized in a 0.25 mum BiCMOS technology from STMicroelectronics using SiGe-C heterojunction bipolar transistors (HBT) and NLDEMOS transistors. BAW inter-stage filter and reject-cell are designed to improve isolation between transmission and reception bands by reducing coupling mechanisms between transmitter (TX) PA and receiver (RX) path. This circuit has been assembled and tested, RX chain gain is measured to be equal to 24 dB and it has more than 40 dB TX leakage attenuation at intermediate frequency (D7) mixer output under a 2.7 V voltage supply. Differential PA with BAW reject filter delivers up to 28 dBm linear output power.

Co-design considerations for frequency drift compensation in BAW-based time reference application

In order to take up the challenge of BAW-based time reference, this paper presents new BAW/Integrated Circuits (IC) co-integration considerations. For the demonstration, a SiP approach is proposed where the Solidly Mounted Resonator (SMR) has been directly flip-chipped on the top of the IC. This 2.5GHz oscillator reaches a −93dBc/Hz phase noise at a 2kHz carrier offset for a 7.3mW power consumption. A 5bit switched capacitor bank permits to correct process deviations with a 12.5kHz accuracy while a varactor capacitance allows compensating a SMR with a −4.2ppm/°C Temperature Coefficient of Frequency (TCF) in a [−40°C,85°C] temperature range.