Jae-Hyun Park

Phase change memory devices and their methods of fabrication

Phase-change random access memory device and method of operating the same

Phase change memory device and method for forming the same

Phase change memory device and method of forming the same

Phase change memory cells having a cell diode and a bottom electrode self-aligned with each other and methods of fabricating the same

Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same

Integrated circuit devices having a stress buffer spacer and methods of fabricating the same

Magnetic random access memory devices including heat generating layers and related methods

Methods of operating magnetic random access memory device using spin injection and related devices

Methods of operating magnetic random access memory devices including heat-generating structures