Jan Doise

Sub‐5 nm Patterning by Directed Self‐Assembly of Oligo(Dimethylsiloxane) Liquid Crystal Thin Films

Highly ordered nanopatterns are obtained at sub-5 nm periodicities by the graphoepitaxial directed self-assembly of monodisperse, oligo(dimethylsiloxane) liquid crystals. These hybrid organic/inorganic liquid crystals are of high interest for nanopatterning applications due to the combination of their ultrasmall feature sizes and their ability to be directed into highly ordered domains without additional annealing.

Implementation of templated DSA for via layer patterning at the 7nm node

In recent years major advancements have been made in the directed self-assembly (DSA) of block copolymers (BCP). Insertion of DSA for IC fabrication is seriously considered for the 7nm node. At this node the DSA technology could alleviate costs for double patterning and limit the number of masks that would be required per layer. At imec multiple approaches for inserting DSA into the 7nm node are considered. One of the most straightforward approaches for implementation would be for via patterning through templated DSA (grapho-epitaxy), since hole patterns are readily accessible through templated hole patterning of cylindrical phase BCP materials. Here, the pre-pattern template is first patterned into a spin-on hardmask stack. After optimizing the surface properties of the template the desired hole patterns can be obtained by the BCP DSA process. For implementation of this approach to be implemented for 7nm node via patterning, not only the appropriate process flow needs to be available, but also appropriate metrology (including for pattern placement accuracy) and DSA-aware mask decomposition are required. In this paper the imec approach for 7nm node via patterning will be discussed.

N7 logic via patterning using templated DSA: implementation aspects

In recent years, major advancements have been made in the directed self-assembly (DSA) of block copolymers (BCP). Insertion of DSA for IC fabrication is seriously considered for the 7 nm node. At this node the DSA technology could alleviate costs for multiple patterning and limit the number of masks that would be required per layer. At imec, multiple approaches for inserting DSA into the 7 nm node are considered. One of the most straightforward approaches for implementation would be for via patterning through templated DSA; a grapho-epitaxy flow using cylindrical phase BCP material resulting in contact hole multiplication within a litho-defined pre-pattern. To be implemented for 7 nm node via patterning, not only the appropriate process flow needs to be available, but also DSA-aware mask decomposition is required. In this paper, several aspects of the imec approach for implementing templated DSA will be discussed, including experimental demonstration of density effect mitigation, DSA hole pattern transfer and double DSA patterning, creation of a compact DSA model. Using an actual 7 nm node logic layout, we derive DSA-friendly design rules in a logical way from a lithographer’s view point. A concrete assessment is provided on how DSA-friendly design could potentially reduce the number of Via masks for a place-and-routed N7 logic pattern.

Implementation of surface energy modification in graphoepitaxy directed self-assembly for hole multiplication

A graphoepitaxy directed self-assembly process using cylindrical phase block copolymers is regarded as a promising approach for patterning irregularly distributed contact holes in future integrated circuits. However, control over cylinder profile and open hole rate, among others, needs to be proven before this technique can be implemented in device fabrication. Computational simulation studies predict that selective control over the surface energy of the template bottom and sidewall is crucial for achieving perpendicular cylinders in an adequate range of template dimensions and block copolymer fill levels. This work offers an experimental investigation of the influence of the surface energy on the morphology of the assembly inside the template. For this study, a dedicated surface energy modification is implemented in our process flow. Selective control over the surface energy of the template bottom and sidewall is achieved by using random copolymer brushes. The optimization of surface energy prior to the ...

Influence of template fill in graphoepitaxy directed self-assembly

Abstract. Directed self-assembly (DSA) of block copolymers (BCP) is considered a promising patterning approach for the 7-nm node and beyond. Specifically, a graphoepitaxy process using a cylindrical phase BCP may offer an efficient solution for patterning randomly distributed contact holes with subresolution pitches, such as found in via and cut mask levels. In any graphoepitaxy process, the pattern density impacts the template fill (local BCP thickness inside the template) and may cause defects due to over- or underfilling of the template. In order to tackle this issue thoroughly, the parameters that determine template fill and the influence of template fill on the resulting pattern should be investigated. Using three process flow variations (with different template surface energy), template fill is experimentally characterized as a function of pattern density and film thickness. The impact of these parameters on template fill is highly dependent on the process flow, and thus prepattern surface energy. Template fill has a considerable effect on the pattern transfer of the DSA contact holes into the underlying layer. Higher fill levels give rise to smaller contact holes and worse critical dimension uniformity. These results are important for DSA-aware design and show that fill is a crucial parameter in graphoepitaxy DSA.

Integration of a templated directed self-assembly-based hole shrink in a short loop via chain

Abstract. The use of directed self-assembly (DSA) of cylinder forming block copolymers (BCP) for contact hole shrink applications has gained increased attention due to the dimensions that can be achieved with this materials. Recent work has focused on engineering the dimensions and surface energy of the templates to obtain straight profiles of the cylinders assembled in them. However, the impact of process optimization on defect formation is measured using scanning electron microscopy before and after transferring the BCP features to a hardmask, which provides limited information about the presence of defects or three-dimensional morphologies in the polymer structures. To identify the presence of single defects in arrays of various densities and sizes, we use Kelvin and chain structures available in the IMEC 28-nm node via chain electrical test vehicle, Everest, in combination with templated DSA. We tuned the surface energy and dimensions of the templates with the use of random copolymers and through the exposure conditions, respectively. Finally, the contact holes obtained with templated DSA of BCP were subsequently transferred into a relevant stack to apply advanced metallization processes and, ultimately, validated electrically.

Dual brush process for selective surface modification in graphoepitaxy directed self-assembly

Grapho-epitaxy directed self-assembly is a potential low-cost solution for patterning via layers with pitches beyond the reach of a single optical lithographic exposure. In this process, selective control of the interfacial energy at the bottom and sidewall of the template is an important but challenging exercise. In this work, a dual brush process is implemented, in which two brushes with distinct end-groups are consecutively grafted to the pre-pattern to achieve fully independent modification of the bottom and sidewall surface of the template. A comprehensive study of hole pattern quality shows that using a dual brush process leads to a substantial improvement in terms of positional and dimensional variability across the process window. These findings will be useful to others who wish to manipulate polymer-surface interactions in directed self-assembly flows.

Via patterning in the 7-nm node using immersion lithography and graphoepitaxy directed self-assembly

Abstract. Insertion of a graphoepitaxy directed self-assembly process as a via patterning technology into integrated circuit fabrication is seriously considered for the 7-nm node and beyond. At these dimensions, a graphoepitaxy process using a cylindrical block copolymer that enables hole multiplication can alleviate costs by extending 193-nm immersion-based lithography and significantly reducing the number of masks that would be required per layer. To be considered for implementation, it needs to be proved that this approach can achieve the required pattern quality in terms of defects and variability using a representative, aperiodic design. The patterning of a via layer from an actual 7-nm node logic layout is demonstrated using immersion lithography and graphoepitaxy directed self-assembly in a fab-like environment. The performance of the process is characterized in detail on a full 300-mm wafer scale. The local variability in an edge placement error of the obtained patterns (4.0 nm 3σ for singlets) is in line with the recent results in the field and significantly less than of the prepattern (4.9 nm 3σ for singlets). In addition, it is expected that pattern quality can be further improved through an improved mask design and optical proximity correction. No major complications for insertion of the graphoepitaxy directed self-assembly into device manufacturing were observed.

Influence of template fill in graphoepitaxy DSA

Directed self-assembly (DSA) of block copolymers (BCP) is considered a promising patterning approach for the 7 nm node and beyond. Specifically, a grapho-epitaxy process using a cylindrical phase BCP may offer an efficient solution for patterning randomly distributed contact holes with sub-resolution pitches, such as found in via and cut mask levels. In any grapho-epitaxy process, the pattern density impacts the template fill (local BCP thickness inside the template) and may cause defects due to respectively over- or underfilling of the template. In order to tackle this issue thoroughly, the parameters that determine template fill and the influence of template fill on the resulting pattern should be investigated. In this work, using three process flow variations (with different template surface energy), template fill is experimentally characterized as a function of pattern density and film thickness. The impact of these parameters on template fill is highly dependent on the process flow, and thus pre-pattern surface energy. Template fill has a considerable effect on the pattern transfer of the DSA contact holes into the underlying layer. Higher fill levels give rise to smaller contact holes and worse critical dimension uniformity. These results are important towards DSA-aware design and show that fill is a crucial parameter in grapho-epitaxy DSA.

A progress report on DSA of high-chi silicon containing block co-polymers (Conference Presentation)

We have developed block co-polymers (BCPs) in which one of the blocks incorporates silicon and the other does not [1]. These materials provide access to BCPs with high Flory-Huggins interaction parameters (χ) and dry etch selectivity under reactive ion etching (RIE) conditions to provide Sub-20 nm patterns [2]. Recently we have investigated a hybrid chemo/grapho-epitaxy process that provides 20 nm and 10 nm full pitch patterning and we have transferred these patterns into useful substrates. This hybrid process produced 20 nm DSA with fewer defects with this material than the conventional chemo-epitaxial process. Cross-sectional scanning transmission electron microscopy (STEM) with electron energy loss spectroscopy (EELS) confirmed that the BCP features span the entire film thickness on hybrid process wafers [3]. We have now succeeded in demonstrating DSA with poly(4-methoxystyrene-block-4-trimethylsilylstyrene) (PMOST-b-PTMSS) aligned by guidelines comprised of cross linked poly(2-vinylpyridine) (Figure a). The process was demonstrated by cross-section analysis to produce features that span the entire BCP film thickness and the introduction of nitrogen into the guide line provides new evidence for the nature of the interaction between the guide lines and the BCP(Figure b). We have also reported the DSA and pattern transfer of poly(5-vinyl-1,3-benzodioxole-block-pentamethyldisilylstyrene) (PVBD-b-PDSS) at 10 nm full pitch. However, in this case, the DSA involved a trade-off between perpendicularity and dislocation defects [4]. Improved brush materials that selectively graft to an etched Cr surface rather than etched imprint resist provide oriented and aligned 5 nm line-and-space patterns that cleanly traverse the full film thickness thickness (Figure c). 1. Bates C. M., et al. Science (2012), 338 (6108), 775. 2. Azarnouchea, L., et al. J. Vac. Sci. Technol. B (2016) 34 (6), 061602/1-061602/10. 3. Blachut, G., et al. Chem. Mater (2016), 28 (24), 8951-8961. 4. Lane A. P., et al. ACS Nano (2017), 11 (8), 7656-i7665.