Jeannie H. Panner

Low-cost testing of high-density logic components

The evolution of a testing method and architecture of a logic-device tester to be used for the next generation of IBMs high-density CMOS ASIC (application-specific integrated circuit) logic components is described. The testers design is based on the architecture of an existing IBM memory tester rather than on a conventional logic-tester design. The testing strategy calls for boundary-scan in each component design, built-in self-test logic within embedded memory arrays, and the use of weighted random-pattern logic testing. The development of the tester hardware is discussed, and capital costs of the new tester are compared with those of other approaches. >

Low cost testing of high density logic components

The authors describe the evolution and architecture of a logic device tester for the next generation of high-density logic components to be produced by IBM at its Essex Junction, Vermont, facility. The tester architecture is based on the design of an existing internal memory tester, rather than on the design of a conventional logic tester. This design point was an evolutionary outcome of a comprehensive logic test strategy development process. That strategy called for inclusion of boundary scan and array built-in self test in each component design, and for adoption of weighted random pattern logic testing (WRPT). WRPT enables tester data volumes to be reduced by two orders of magnitude in comparison with stored pattern logic testing, while simultaneously maintaining high test quality. The resulting tester architecture and design are described in the context of those decisions.<<ETX>>The evolution of a testing method and architecture of a logic-device tester to be used for the next generation of IBMs high-density CMOS ASIC (application-specific integrated circuit) logic components is described. The testers design is based on the architecture of an existing IBM memory tester rather than on a conventional logic-tester design. The testing strategy calls for boundary-scan in each component design, built-in self-test logic within embedded memory arrays, and the use of weighted random-pattern logic testing. The development of the tester hardware is discussed, and capital costs of the new tester are compared with those of other approaches.<<ETX>>

I/O impedance matching algorithm for high-performance ASICs

This paper discusses a design style that utilizes an area array of flip-chip solder bump connections, I/O circuit designs that implement a programmable impedance matching algorithm, and a design system that must utilize these features during chip layout, chip checking, and release to manufacturing. Results from a recent test chip are also given.

A 300 K-circuit ASIC logic family CAD system

A computer-aided design (CAD) system has been developed to design CMOS application-specific integrated circuit (ASIC) logic family chips denser than any previously available, with performance comparable to bipolar technology. Design flow and key new features are described, and test chip results are given. Logic synthesis and transformation systems translate the designs to a technology-independent internal representation; optimize them for area, performance, and testability; and translate them to an implementation in the technology circuit library. The synthesis systems add logic circuits needed for testing and generate information about the clock trees used later in physical clock-free construction.<<ETX>>

The first copper ASICs: A 12M-gate technology

This paper describes the first CMOS ASIC logic family built with copper metallurgy. Chips with up to 12-million equivalent gates can be designed in the 0.16 /spl mu/m process. The technology, product characteristics, CAD system and first customer chips are discussed.

A comprehensive CAD system for high-performance 300 K-circuit ASIC logic chips

A computer-aided design (CAD) system has been developed to support design of CMOS application-specific integrated circuit (ASIC) logic chips containing more than 300 K equivalent two-input NANDs with 180-ps typical gate delays. The underlying technology is a 0.8- mu m, four-level-metal, single-poly CMOS process, with a 0.45- mu m nominal effective channel length and 180-ps typical gate delay. Both standard-cell and gate-array circuit libraries are provided, including fixed and growable memory macros. Key new system features are described in the areas of high-level design and synthesis, delay calculation and timing analysis, timing guidance to physical design, physical design, clock construction, and test generation. Early processing results are reported for several test chips, including a 9.7-mm 2-million-transistor chip and a 14.5-mm 300 K-equivalent-gate chip. >