Jian Pang

13.3 A 56Gb/s W-band CMOS wireless transceiver

This paper presents a 56Gb/s 16-QAM 65nm CMOS transceiver using a W-band carrier. Two wideband IF signals are up- and downconverted simultaneously with 68GHz and 102GHz carriers. The transceiver achieves 56Gb/s data-rate with TX-to-RX EVM of -16.5dB within 0.1m distance. The transceiver consumes 260mW and 300mW from a 1V supply in TX and RX modes, respectively. This results in 10pJ/bit efficiency, which is a state-of-the-art-efficient high-data-rate mm-Wave CMOS transceiver.

An LO-buffer-less 60-GHz CMOS transmitter with oscillator pulling mitigation

A low-power and small-area 60-GHz CMOS transmitter with oscillator pulling mitigation is presented. The subharmonic injection locking technique for the suppression of pulling effects is analyzed and demonstrated. The transmitter fabricated in a 65nm CMOS process achieves 7.04-Gb/s data rate with an EVM performance of −25 dB in 16QAM. The whole transmitter consumes 210 mW from a 1.2-V supply and occupies a core area of 0.82 mm2 including a PLL.

24.9 A 128-QAM 60GHz CMOS transceiver for IEEE802.11ay with calibration of LO feedthrough and I/Q imbalance

The 60GHz carrier with 9GHz bandwidth enables ultra-high-speed wireless communication in recent years [1–4]. To meet the demand from rapidly-increasing data traffic, the IEEE802.11ay standard is one of the most promising candidates aiming for 100Gb/s data-rate. Both higher-order digital modulation such as 128QAM and channel bonding at 60GHz are considered to be used in the IEEE802.11ay standard. However, the more severe requirements of LO feedthrough (LOFT) and image-rejection ratio (IMRR) have to be satisfied, so much higher accuracy in built-in calibration circuitry is required across the entire 9GHz spectrum for LOFT and I/Q imbalance calibration to achieve the required EVM.

A 100mW 3.0 Gb/s spectrum efficient 60 GHz Bi-Phase OOK CMOS transceiver

A novel high-data-rate low-power spectrum-efficient 60GHz Bi-Phase-On-Off-Keying (BPOOK) transceiver is presented for indoor short-range IoT application targeting the common 60GHz spectrum mask used in IEEE 802.11ad/ WiGig standards. By employing bi-phase encoder and double-balanced mixer, the BPOOK transmitter spectrum is efficient to be compliant with 2-channel bonding spectrum mask. The proposed 60GHz OOK transceiver is fabricated in 65nm CMOS, achieves 3.0 Gb/s data-rate and −46 dBm sensitivity, while consuming a power of 100mW including the on-chip 60GHz synthesizer.

64-QAM 60-GHz CMOS Transceivers for IEEE 802.11ad/ay

This paper presents 64-quadrature amplitude modulation (QAM) 60-GHz CMOS transceivers with four-channel bonding capability, which can be categorized into a one-stream transceiver and a two-stream frequency-interleaved (FI) transceiver. The transceivers are both fabricated in a standard 65-nm CMOS technology. For the proposed one-stream transceiver, the TX-to-RX error vector magnitude (EVM) is less than −23.9 dB for 64-QAM wireless communication in all four channels defined in the IEEE 802.11ad/WiGig. The maximum communication distance with the full rate can reach 0.13 m for 64 QAM, 0.8 m for 16 QAM, and 2.6 m for QPSK using 14-dBi horn antennas. A data rate of 28.16 Gb/s is achieved in 16 QAM by four-channel bonding. The transmitter, receiver, and phase-locked loop consume 186, 155, and 64 mW, respectively. The core area of the transceiver is 3.9 mm2. For the proposed two-stream FI transceiver, four-channel bonding in 64 QAM is realized with a data rate of 42.24 Gb/s and an EVM of less than −23 dB. The front end consumes 544 mW in transmitting mode and 432 mW in receiving mode from a 1.2-V supply. The core area of the transceiver is 7.2 mm2.

Substrate noise isolation improvement by helium-3 ion irradiation technique in a triple-well CMOS process

Helium-3 ion irradiation technique is proposed to improve silicon substrate noise isolation by creating a local semi-insulated region with a resistivity over 1kΩ-cm in low-resistive silicon substrate. Noise isolation is improved about 10dB at 2GHz after helium-3 ion irradiation in a 180-nm CMOS process. A 90% noise reduction has been achieved in the measurement results for test structures with guard rings. The noise isolation can be kept even after annealing at 200°C for 1 hour.