Jong-Ki Kwon

The novel SCR-based ESD protection device with high holding voltage

This paper introduces a novel silicon controlled rectifier (SCR)-based device for ESD power clamp and I/O clamp. The device obtained the high holding voltage and low triggering voltage by adding a p-drift junction and n-well in the cathode region. These characteristics enable latch-up immune normal operation as well as superior full chip ESD protection. The proposed device is designed by compatible 0.35um BCD(Bipolar-CMOS-DMOS) technology. We investigated electrical characteristic by measurement and TCAD simulation. In the measurement result, the proposed device has triggering voltage of 12.8V and holding voltage of 10V. The proposed device has high holding voltage as well as high robustness and second breakdown current. (It2=67.4mA/um)

The design of high holding voltage SCR for whole-chip ESD protection

In this paper, we have investigated the electrical characteristics of Silicon Controlled Rectifier (SCR)-based ESD power clamp circuit with high holding voltage for whole-chip ESD protection. The proposed ESD power clamp circuit (HHVSCR: High Holding Voltage SCR) has different well (n/p-well) length (3/7µm - 8/2µm) and p-drift (p+) length (8µm - 16µm). The measurement results indicate that dimension of n/p-well and p-drift has a great effect on holding voltage (2V-5V) and a little effect on the triggering voltage (6.5V∼7V). And the whole-chip ESD protection was designed for 2.5∼3.3V applications, this whole-chip ESD protection design can be discharged in ESD-stress mode (PD, ND, PS, NS) as well as VDD-VSS mode. The robustness of the novel ESD protection cells were measured to 6kV (HBM: Human Body Model), 280V (MM: Machine Model).

Analysis of the electrical characteristics of LDMOSFET under various temperature

In this paper, we have investigated the electrical characteristics of power LDMOSFETs having different gate lengths(2.1 mum -3 mum) in the temperature range of 100 K-500 K. The specific on-resistance and the off-state breakdown voltage increase with temperature. The result shows that the specific on- resistance increases exponentially with the exponent of 2.2 and, by contrast, the off-state breakdown voltage increases linearly with a slope of 100 mV/K (Drift region concentration of measured device: 2 times 1015 cm-3). As a result, Ron/BV, known for a figure of merit of power device, increases with temperature.