Kui-Dong Kim

The design of high holding voltage SCR for whole-chip ESD protection

In this paper, we have investigated the electrical characteristics of Silicon Controlled Rectifier (SCR)-based ESD power clamp circuit with high holding voltage for whole-chip ESD protection. The proposed ESD power clamp circuit (HHVSCR: High Holding Voltage SCR) has different well (n/p-well) length (3/7µm - 8/2µm) and p-drift (p+) length (8µm - 16µm). The measurement results indicate that dimension of n/p-well and p-drift has a great effect on holding voltage (2V-5V) and a little effect on the triggering voltage (6.5V∼7V). And the whole-chip ESD protection was designed for 2.5∼3.3V applications, this whole-chip ESD protection design can be discharged in ESD-stress mode (PD, ND, PS, NS) as well as VDD-VSS mode. The robustness of the novel ESD protection cells were measured to 6kV (HBM: Human Body Model), 280V (MM: Machine Model).

The Design of LVDS Transmitter with ESD Protection Circuit using BiCMOS Technologies

This paper presents the design of LVDS (low-voltage-differential-signaling) transmitter for Gb/s-per-pin operation using BiCMOS technology. To reduce chip area, LVDS transmitters switching devices are replaced with lateral bipolar devices. Also the proposed LVDS transmitter is operated at 1.8 V power supply. Its maximum data rate is 2.8 Gb/s approximately. In addition, an ESD protection circuit is designed for ESD protection. This structure has low latch-up phenomenon by using turn on/off character of N-channel MOSFET and low triggering voltage by turning P-channel MOSFET in the SCR structure. The triggering voltage is simulated to 4.5 V-8 V as the variation of gate length. Finally, the high speed I/O interface circuit with the low triggered ESD protection device is designed in a single-chip.

A study on the thermal reliability of high voltage MOSFET device

In this study, the electrical characteristics of high voltage MOSFET(HV-MOSFET) under high temperature were investigated. And, specific on-resistance, threshold voltage, trans-conductance, drain current of the HV-MOSFET were measured over a temperature range of 300 K les T les 450 K. The results of this study indicate that extended drift region length has a great effect on electrical characteristics, but that is does little effect on temperature dependence. The specific on-resistance increases slightly with temperature. Especially, at high temperature(at 450 K), the specific on-resistance increase about 30% than that in room temperature. And, in high temperature condition (at 400 K), drain current decrease about 30%, Also, transconductance(gm) decreases with temperature.