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Jörg Rottstegge

Infineon Technologies

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Publication

Featured researches published by Jörg Rottstegge.

Archive | 2002

Process for sidewall amplification of resist structures and for the production of structures having reduced structure size

Jörg Rottstegge; Eberhard Kühn; Waltraud Herbst; Christian Eschbaumer; Christoph Hohle; Gertrud Falk; Michael Sebald

Archive | 2002

Negative resist process with simultaneous development and silylation

Jörg Rottstegge; Eberhard Kühn; Waltraud Herbst; Christian Eschbaumer; Christoph Hohle; Gertrud Falk; Michael Sebald

Archive | 2002

Negative resist process with simultaneous development and chemical consolidation of resist structures

Jörg Rottstegge

Archive | 2002

Amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers

Jörg Rottstegge; Christian Eschbaumer; Christoph Hohle; Waltraud Herbst; Michael Sebald

Archive | 2002

Chemically amplified photoresist and process for structuring substrates having resist copolymers with enhanced transparency resulting from fluorinating the photochemically cleavable leaving groups and being applicable to 157 nm photolithography

Christoph Hohle; Jörg Rottstegge; Christian Eschbaumer; Michael Sebald

Archive | 2002

Chemically amplified photoresist and process for structuring substituents using transparency enhancement of resist copolymers for 157 NM photolithography through the use of fluorinated cinnamic acid derivatives

Christoph Hohle; Jörg Rottstegge; Christian Eschbaumer; Michael Sebald

Archive | 2002

Silicon-containing resist for photolithography

Jörg Rottstegge; Eberhard Kühn; Waltraud Herbst; Christian Eschbaumer; Christoph Hohle; Michael Sebald

Archive | 2002

Silylating process for photoresists in the UV region

Jörg Rottstegge; Gertrud Falk; Christian Eschbaumer; Christoph Hohle; Michael Sebald

Archive | 2003

Fluorine-containing photoresist having reactive anchors for chemical amplification and improved copolymerization properties

Jörg Rottstegge

Archive | 2002

Photoresists with reaction anchors for chemical consolidation of resist structures for exposures at 157 nm

Jörg Rottstegge; Christian Eschbaumer; Christoph Hohle; Waltraud Herbst

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Collaboration

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Michael Sebald

Siemens

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Christian Eschbaumer

Infineon Technologies

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Christoph Hohle

Infineon Technologies

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Gertrud Falk

Infineon Technologies

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Eberhard Kühn

Siemens

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Waltraud Herbst

Infineon Technologies

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Christoph Dr. Hohle

Infineon Technologies

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Jens Ferbitz

Folkwang University of the Arts

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Kerstin Seibold

Infineon Technologies

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Marion Kern

Infineon Technologies

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