Josef Willer
Infineon Technologies
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Publication
Featured researches published by Josef Willer.
Microelectronic Engineering | 2001
Bernhard Sell; Josef Willer; K. Pomplun; Annette Sänger; Dirk Schumann; Wolfgang H. Krautschneider
Abstract In today’s ULSI technology there is an increasing demand in metal electrodes for storage capacitors and transistors. In this publication we present an investigation of MOS capacitor structures with CVD tungsten silicide (WSi x ) as metal electrode in conjunction with silicon dioxide (SiO 2 ) and oxidized nitride (NO). Bulk silicon and poly silicon were used as second electrode, respectively. Tungsten silicide has been used both as gate electrode and as bottom electrode. For both cases thermal stability up to 780°C with low leakage current has been shown. Band discontinuities between SiO 2 and WSi x were estimated from current–voltage measurements.
Archive | 2001
Josef Willer; Ronald Kakoschke
Archive | 2006
Josef Willer
Archive | 2002
Josef Willer; Franz Hofmann; Armin Kohlhase; Christoph Ludwig
Archive | 2001
Herbert Palm; Josef Willer
Archive | 2001
Josef Willer
Archive | 2003
Herbert Palm; Josef Willer
Archive | 1997
Franz Hofmann; Wolfgang Krautschneider; Josef Willer; Hans Reisinger
Archive | 2003
Franz Hofmann; Josef Willer
Archive | 2002
Josef Willer; Herbert Palm
