Jung-yup Kim
Samsung
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Publication
Featured researches published by Jung-yup Kim.
international conference on vlsi and cad | 1999
Jung-yup Kim; B.U. Yoon; S.R. Hah; J.T. Moon; Sang In Lee
CMP uniformity and planarity directly affect the Post-CMP TTV (Total Thickness Variation). Decreased TTV is necessary for successful patterning of devices. The trend in scaling down of device feature size requires smaller TTV and hence tighter CMP performances. The three layer pad stack with IC-1000/hard layer/foam layer (SHaL) was designed to improve the planarity with minimal deterioration of CMP uniformity. SHaL CMP process improves the planarity with negligible effect on uniformity. Reduced CMP time and less ILD oxide is achievable with the SHaL CMP process. Therefore preliminary tests show that improvements in post-CMP TTV can be achieved with reduced CoO. Further enhancements in the efficiency of the process is under investigation.
Archive | 2003
Young-rae Park; Jung-yup Kim; Bo-Un Yoon; Kwang-Bok Kim; Jae-phill Boo; Jong-Won Lee; Sang-rok Hah; Kyung-hyun Kim; Chang-ki Hong
Archive | 2000
Jung-yup Kim; Chang-ki Hong
Archive | 2001
Hong-kyu Hwang; Young-rae Park; Jung-yup Kim; Jeong-sic Jeon; Bo-Un Yoon; Sang-rok Hah
Archive | 2001
Jung-yup Kim; Young-rae Park; Sang-rok Hah
Archive | 2001
Young-rae Park; Jung-yup Kim; Bo-Un Yoon; Sang-rok Hah
Archive | 2000
Tai-su Park; Moon-han Park; Kyung-Won Park; Han-sin Lee; Jung-yup Kim; Chang-ki Hong; Ho-Kyu Kang
Archive | 2001
Gee-won Nam; Gi-jong Park; Hong-kyu Hwang; Jun-shik Bae; Young-rae Park; Jung-yup Kim; Bo-Un Yoon; Sang-rok Hah
Archive | 2002
Jung-yup Kim; Sang-rok Hah
Archive | 2001
Jung-yup Kim; Young-rae Park; Sang-rok Hah