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Katja Huy

Advanced Micro Devices

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Publication

Featured researches published by Katja Huy.

IEEE Transactions on Semiconductor Manufacturing | 2005

A novel approach for the patterning and high-volume production of sub-40-nm gates

Karla Romero; Rolf Stephan; Gunter Grasshoff; Martin Mazur; Hartmut Ruelke; Katja Huy; Jochen Klais; Sarah N. McGowan; Srikanteswara Dakshina-Murthy; Scott Bell; Marilyn I. Wright

A novel approach for the patterning and manufacturing of sub-40-nm gate structures is presented. Rather than using resist or an inorganic hardmask as the patterning layer, this gate patterning scheme uses an amorphous carbon (a:C) and cap hardmask to pattern small gates. Healthy and manufacturable gate lengths have been achieved below 35 nm with this scheme, and the potential exists for further extendibility.

Archive | 2004

Technique for forming recessed sidewall spacers for a polysilicon line

Thorsten Kammler; Katja Huy; Christoph Schwan

Archive | 2004

Technique for forming a spacer for a line element by using an etch stop layer deposited by a highly directional deposition technique

Thorsten Kammler; Katja Huy; Markus Lenski

Archive | 2005

Nitrogen-free ARC layer and a method of manufacturing the same

Hartmut Ruelke; Katja Huy; Sven Muehle

Archive | 2006

METHOD FOR FORMING A TUNGSTEN INTERCONNECT STRUCTURE WITH ENHANCED SIDEWALL COVERAGE OF THE BARRIER LAYER

Kai Frohberg; Katja Huy; Volker Kahlert

Archive | 2006

Semiconductor device comprising copper-based contact plug and a method of forming the same

Kai Frohberg; Frank Koschinsky; Katja Huy

Archive | 2005

Halbleiterbauelement mit einem Kontaktpfropfen auf Kupferbasis und ein Verfahren zur Herstellung desselben

Kai Frohberg; Frank Koschinsky; Katja Huy

Archive | 2005

A semiconductor device with a contact plug copper base and a method for manufacturing the same

Kai Frohberg; Frank Koschinsky; Katja Huy

Archive | 2005

Halbleiterbauelement mit einem Kontaktpfropfen auf Kupferbasis und ein Verfahren zur Herstellung desselben A semiconductor device with a contact plug copper base and a method for manufacturing the same

Kai Frohberg; Frank Koschinsky; Katja Huy

Archive | 2005

Semiconductor component with transistor has contact plug in dielectric constant layer that comprises copper and is separated from the dielectric constant layer by a barrier layer containing tungsten

Kai Frohberg; Katja Huy; Frank Koschinsky

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Collaboration

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Thorsten Kammler

Advanced Micro Devices

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Hartmut Ruelke

GlobalFoundries

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Kai Frohberg

Advanced Micro Devices

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Markus Lenski

Advanced Micro Devices

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Frank Koschinsky

Advanced Micro Devices

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Karla Romero

Advanced Micro Devices

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Michael Austin Turner

Advanced Micro Devices

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Christoph Schwan

GlobalFoundries

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Hartmut Rülke

GlobalFoundries

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Christoph Schwan

GlobalFoundries

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