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Kojiro Kameyama

Sanyo

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Publication

Featured researches published by Kojiro Kameyama.

Archive | 2005

Semiconductor device with a via hole having a diameter at the surface larger than a width of a pad electrode

Kojiro Kameyama; Akira Suzuki; Mitsuo Umemoto

Archive | 2006

Mmethod for manufacturing semiconductor device

Kojiro Kameyama; Takahiro Oikawa; Katsuyuki Seki; Akira Suzuki; 工次郎 亀山; 貴弘 及川; 彰 鈴木; 克行 関

Archive | 2008

Electrode structure and semiconductor device

Kikuo Okada; Kojiro Kameyama; Takahiro Oikawa

Archive | 2005

Semiconductor device manufacturing method of the same

Mitsuo Umemoto; Kojiro Kameyama; Akira Suzuki

The Japan Society of Applied Physics | 2004

Application of High Reliable Silicon Thru-Via to Image Sensor CSP

Kojiro Kameyama; Yoshio Okayama; Mitsuo Umemoto; Akira Suzuki; Hiroshi Terao; Masataka Hoshino; Kenji Takahashi

Archive | 2005

Semiconductor device with penetrating electrode

Kojiro Kameyama; Akira Suzuki; Mitsuo Umemoto

Archive | 2008

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH THROUGH HOLE

Kojiro Kameyama; Akira Suzuki; Yoshio Okayama; Mitsuo Umemoto

Archive | 2006

Semiconductor device with via hole for electric connection

Kojiro Kameyama; Akira Suzuki; Yoshio Okayama; Mitsuo Umemoto

Archive | 2005

Semiconductor device, manufacturing method thereof, and mounting substrate thereof

Kojiro Kameyama; Takahiro Oikawa; Akira Suzuki; 工次郎 亀山; 貴弘 及川; 彰 鈴木

Archive | 2005

Processing method of object to be attracted and electrostatic attraction method

Kojiro Kameyama; Yoshihisa Okayama; Akira Suzuki; Mitsuo Umemoto; 工次郎 亀山; 芳央 岡山; 光雄 梅本; 彰 鈴木

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Collaboration

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Akira Suzuki

National Institute of Advanced Industrial Science and Technology

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Mitsuo Umemoto

Sanyo

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Yoshio Okayama

Sanyo

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Hiroshi Terao

Sanyo

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Kenji Takahashi

Tokyo Institute of Technology

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Masataka Hoshino

Fujitsu

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Hitoshi Yonemura

Fujitsu

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Toshihiro Yonezawa

Okayama University

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Yasuhiro Yamaji

National Institute of Advanced Industrial Science and Technology

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Yoshihiko Nemoto

Taiyo Yuden

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