Kwan-yong Lim
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Publication
Featured researches published by Kwan-yong Lim.
international electron devices meeting | 2016
Gen Tsutsui; Ruqiang Bao; Kwan-yong Lim; Robert R. Robison; Reinaldo A. Vega; Jie Yang; Zuoguang Liu; Miaomiao Wang; Oleg Gluschenkov; Chun Wing Yeung; Koji Watanabe; Steven Bentley; Hiroaki Niimi; Derrick Liu; Huimei Zhou; Shariq Siddiqui; Hoon Kim; Rohit Galatage; Rajasekhar Venigalla; Mark Raymond; Praneet Adusumilli; Shogo Mochizuki; Thamarai S. Devarajan; Bruce Miao; B. Liu; Andrew M. Greene; Jeffrey Shearer; Pietro Montanini; Jay W. Strane; Christopher Prindle
Low Ge content SiGe-based CMOS FinFET is one of the promising technologies [1-2] offering solutions for both high performance and low power applications. In this paper, we established a competitive SiGe-based CMOS FinFET baseline and examined various elements for high performance offering. The performance elements in gate stack, channel doping, contact resistance, and junction have been explored to provide a cumulative 20% / 25% (n/pFET) performance enhancement. These elements provide a viable path towards performance enhancement for future technology nodes.
Archive | 2016
Ruilong Xie; Min Gyu Sung; Ryan Ryoung-Han Kim; Kwan-yong Lim; Chanro Park
Archive | 2016
John H. Zhang; Carl Radens; Steven Bentley; Brian A. Cohen; Kwan-yong Lim
Archive | 2016
John H. Zhang; Kwan-yong Lim; Steven Bentley; Chanro Park
Archive | 2014
Kwan-yong Lim; Min Gyu Sung; Jody A. Fronheiser; Christopher Prindle
Archive | 2016
Ruilong Xie; Kwan-yong Lim; Min Gyu Sung; Ryan Ryoung-Han Kim
Archive | 2017
Min Gyu Sung; Kwan-yong Lim; Hiroaki Niimi
Archive | 2016
Ruilong Xie; Andy Wei; William J. Taylor; Ryan Ryoung-Han Kim; Kwan-yong Lim; Chanro Park
Archive | 2016
Steven Bentley; John H. Zhang; Kwan-yong Lim; Hiroaki Niimi
Archive | 2016
John H. Zhang; Carl Radens; Steven Bentley; Brian A. Cohen; Kwan-yong Lim
