Ruilong Xie

Methods of forming a dielectric cap layer on a metal gate structure

METHODS OF FORMING STRESSED LAYERS ON FINFET SEMICONDUCTOR DEVICES AND THE RESULTING DEVICES

INTEGRATED CIRCUITS AND METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH REDUCED PARASITIC CAPACITANCE

METHODS OF FORMING DIFFUSION BREAKS ON INTEGRATED CIRCUIT PRODUCTS COMPRISED OF FINFET DEVICES AND THE RESULTING PRODUCTS

METHODS OF FORMING A PROTECTION LAYER ON A SEMICONDUCTOR DEVICE AND THE RESULTING DEVICE

METHODS OF FORMING REPLACEMENT GATE STRUCTURES FOR SEMICONDUCTOR DEVICES AND THE RESULTING DEVICES

Methods of forming single and double diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products

METHODS OF FORMING EPI SEMICONDUCTOR MATERIAL IN A TRENCH FORMED ABOVE A SEMICONDUCTOR DEVICE AND THE RESULTING DEVICES

METHODS OF FORMING A SEMICONDUCTOR DEVICE WITH A SPACER ETCH BLOCK CAP AND THE RESULTING DEVICE

SINGLE AND DOUBLE DIFFUSION BREAKS ON INTEGRATED CIRCUIT PRODUCTS COMPRISED OF FINFET DEVICES