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Dive into the research topics where Steven Bentley is active.

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Featured researches published by Steven Bentley.


international electron devices meeting | 2016

Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT

Gen Tsutsui; Ruqiang Bao; Kwan-yong Lim; Robert R. Robison; Reinaldo A. Vega; Jie Yang; Zuoguang Liu; Miaomiao Wang; Oleg Gluschenkov; Chun Wing Yeung; Koji Watanabe; Steven Bentley; Hiroaki Niimi; Derrick Liu; Huimei Zhou; Shariq Siddiqui; Hoon Kim; Rohit Galatage; Rajasekhar Venigalla; Mark Raymond; Praneet Adusumilli; Shogo Mochizuki; Thamarai S. Devarajan; Bruce Miao; B. Liu; Andrew M. Greene; Jeffrey Shearer; Pietro Montanini; Jay W. Strane; Christopher Prindle

Low Ge content SiGe-based CMOS FinFET is one of the promising technologies [1-2] offering solutions for both high performance and low power applications. In this paper, we established a competitive SiGe-based CMOS FinFET baseline and examined various elements for high performance offering. The performance elements in gate stack, channel doping, contact resistance, and junction have been explored to provide a cumulative 20% / 25% (n/pFET) performance enhancement. These elements provide a viable path towards performance enhancement for future technology nodes.


Archive | 2013

METHODS OF FORMING SUBSTRATES COMPRISED OF DIFFERENT SEMICONDUCTOR MATERIALS AND THE RESULTING DEVICE

Bartlomiej Jan Pawlak; Steven Bentley; Ajey Poovannummoottil Jacob


Archive | 2014

Methods of forming fins for a FinFET semiconductor device using a mandrel oxidation process

Bartlomiej Jan Pawlak; Steven Bentley; Ajey Poovannummoottil Jacob


Archive | 2015

METHODS OF FORMING EPITAXIAL SEMICONDUCTOR MATERIAL ON SOURCE/DRAIN REGIONS OF A FINFET SEMICONDUCTOR DEVICE AND THE RESULTING DEVICES

Jody A. Fronheiser; Bharat Krishnan; Murat Kerem Akarvardar; Steven Bentley; Ajey Poovannummoottil Jacob; Jinping Liu


Archive | 2014

METHODS FOR THE PRODUCTION OF INTEGRATED CIRCUITS COMPRISING EPITAXIALLY GROWN REPLACEMENT STRUCTURES

Steven Bentley; Kejia Wang; Sylvie Mignot; Shurong Liang


Archive | 2014

Methods of forming transistor devices with different threshold voltages and the resulting products

Ruilong Xie; Naim Moumen; Chanro Park; Hoon Kim; Steven Bentley


Archive | 2016

FINFET DEVICE INCLUDING A UNIFORM SILICON ALLOY FIN

Ajey Poovannummoottil Jacob; Jody A. Fronheiser; Murat Kerem Akarvardar; Steven Bentley


Archive | 2016

Methods of forming vertical transistor devices with self-aligned top source/drain conductive contacts

John H. Zhang; Carl Radens; Steven Bentley; Brian A. Cohen; Kwan-yong Lim


Archive | 2016

Self-aligned gate-first VFETs using a gate spacer recess

John H. Zhang; Kwan-yong Lim; Steven Bentley; Chanro Park


Archive | 2015

SEMICONDUCTOR DEVICES INCLUDING AN ELECTRICALLY-DECOUPLED FIN AND METHODS OF FORMING THE SAME

Steven Bentley; Ajey Poovannummoottil Jacob

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