M. Kaysar Rahim

Characterization of microprocessor chip stress distributions during component packaging and thermal cycling

On-chip piezoresistive stress sensors represent a unique approach for characterizing stresses in silicon die embedded within complicated packaging architectures. In this work, we have used test chips containing such sensors to measure the stresses induced in microprocessor die after various steps of the assembly process, as well as to continuously characterize the in-situ die surface stress during slow temperature changes and thermal cycling experiments. The utilized (111) silicon sensor rosettes were able to measure the complete three-dimensional stress state (all 6 stress components) at each sensor site being monitored by the data acquisition hardware. The test chips had dimensions of 20 × 20 mm, and 3600 lead free solder interconnects (full area array) were used to connect the chips to high CTE ceramic chip carriers. Before packaging, the sensor resistances were measured by directly probing the test chip wafers. The chips were then diced, reflowed to the ceramic substrate, and then underfilled and cured. Finally, a metallic lid was attached to complete the ceramic LGA package. After every packaging step (solder reflow, underfill dispense and cure, lid attachment and adhesive cure), the sensor resistances were re-measured, so that the die stresses induced by each assembly operation could be characterized. A set of low stress test fixtures was developed to eliminate clamping induced stresses being generated during the sensor resistance measurements. The build-up of the die stresses was found to be monotonically increasing, and the relative severity of each assembly step was judged and compared. In addition, finite element models of the packaging process were developed and correlated with the test chip data. This combined approach allowed for various material sets (solders, underfills, TIM materials, lid metals, and lid adhesives) to be analyzed and rated for their contribution to the die stress level. After first level packaging of the chips on the ceramic chip carriers, experiments have been performed to analyze the effects of slow (quasi-static) temperature changes and thermal cycling on the die stresses. Thermal cycling of selected parts was performed from 0 to 100 C (40 minute cycle, 10 minute ramps and dwells). After various durations of cycling, the sensor resistances at critical locations on the die device surface (e.g. die center and die corners) were recorded. From the resistance data, the stresses at each site were calculated and plotted versus time.

Application of stress sensing test chips to area array packaging

Thermal cycling accelerated life testing is often used to qualify area array packages (e.g. Ball Grid Arrays and Flip Chip) for various applications. Finite element life predictions for thermal cycling configurations are challenging due to the complicated temperature/time dependent constitutive relations and failure criteria needed for solders and encapsulants and their interfaces, aging/evolving material behavior (e.g. solders), difficulties in modeling plating finishes, the complicated geometries of typical electronic assemblies, etc. In addition, in-situ measurements of stresses and strains in assemblies subjected to temperature cycling is difficult because of the extreme environmental conditions and the fact that the primary materials/interfaces of interest (e.g. solder joints, die device surface, wire bonds, etc.) are embedded within the assembly (not at the surface). For these reasons, we really know quite little about the evolution of the stresses, strains, and deformations occurring within sophisticated electronic packaging geometries during thermal cycling. In our research, we are using test chips containing piezoresistive stress sensors to continuously characterize the in-situ die surface stress during long-term thermal cycling of several different area array packaging technologies including plastic ball grid array (PBGA) components, ceramic ball grid array (CBGA) components, and flip chip on laminate assemblies. The utilized (111) silicon test chips are able to measure the complete three-dimensional stress state (all 6 stress components) at each sensor site being monitored by the data acquisition hardware. The die stresses are initially measured at room temperature after packaging. The assemblies are then subjected to thermal cycling over various temperature ranges including 0 to 100 °C, −40 to 125 °C, and −55 to 125 °C, for up to 3000 thermal cycles. During the thermal cycling, sensor resistances at critical locations on the die device surface (e.g. the die center and die corners) are recorded. From the resistance data, the stresses at each site can be calculated and plotted versus time. The experimental observations show significant cycle-to-cycle evolution in the stress magnitudes due to material aging effects, stress relaxation and creep phenomena, and development of interfacial damage. The observed stress variations as a function of thermal cycling duration are also being correlated with the observed delaminations at the die surface (as measured using scanning acoustic microscopy (C-SAM)) and finite element simulations that include material constitutive models that incorporate thermal aging effects.

Measurement of Stress and Delamination in Flip Chip on Laminate Assemblies

Mechanical stress distributions in packaged silicon die that have resulted during assembly or environmental testing can be accurately characterized using test chips incorporating integral piezoresistive sensors. In this paper, an overview of recent measurements made in flip chip on laminate assemblies with (111) silicon test chips is presented. Transient die stress measurements have been made during underfill cure, and the room temperature die stresses in final cured assemblies have been compared for several different underfill encapsulants. The experimental stress measurements in the flip chip samples were then correlated with finite element predictions for the tested configurations. In addition, stress variations have been monitored in the assembled flip chip die as the test boards were subjected to slow temperature changes from −40 to +150°C. Finally the stress variations occurring during thermal cycling from −40 to +125°C have been characterized. These measurements have been correlated with the delaminations occurring at the die passivation to underfill interface measured using C-mode Scanning Acoustic Microscopy (C-SAM). Using the measurements and numerical simulations, valuable insight has been gained on the effects of assembly variables and underfill material properties on the reliability of flip chip packages.Copyright

Measurement of die stress distributions in flip chip CBGA packaging

On-chip piezoresistive stress sensors represent a unique approach for characterizing stresses in silicon die embedded within complicated packaging architectures. In this work, we have used test chips containing such sensors to measure the stresses induced in microprocessor die after various steps of the assembly process, as well as the stress changes occurring due to thermal cycling. The utilized (111) silicon sensor rosettes were able to measure the complete three-dimensional stress state (all 6 stress components) at each sensor site being monitored by the data acquisition hardware. The test chips had dimensions of 20 × 20 mm, and 3600 lead free solder interconnects (full area array) were used to connect the chips to high CTE ceramic chip carriers.

Characterization of Die Stresses in Plastic Packages Subjected to Moisture and Thermal Exposures

Stress sensing test chips are a powerful tool for measuring in-situ stresses in electronic packages. In this study, we have applied (111) silicon test chips to perform a variety of measurements of die stresses in plastic packages. In particular, stresses were characterized in 240 pin Quad Flat Packs (QFPs) subjected to various thermal and moisture loadings. The utilized 10 × 10 mm sensor chips incorporated optimized eight-element piezoresistive rosettes that were capable of measuring the complete state of stress at the die surface (including the interfacial shear stresses).The fabricated test chips were initially used to measure die stresses in the QFPs after molding and post mold bake. Measurement results were correlated with finite element simulations of the molding process. Subsequently, the effects of thermal cycling on the measured die stress distributions for selected packages were investigated. After these initial measurements, the samples were stored at room temperature and ambient humidity for 17 years. The samples were then re-measured after this long term storage to evaluate the degree of die stress relaxation that had occurred. Several packages were then exposed to a harsh high temperature and high humidity environment (85 C, 85% RH) for various time durations, and allowed to absorb moisture. The die stresses at several locations were characterized as a function of time during the hygrothermal exposure. The weight variations in each sample were also measured during the 85/85 exposure to gauge the moisture uptake, and reversibility tests were conducted to see whether the effects of moisture uptake were permanent. Using these measurements and numerical simulations, valuable insight has been gained on moisture induced failure phenomena in plastic packages.Good agreement was found between the predicted and measured die normal stress distributions occurring after molding of the QFP. The magnitudes of the in-plane normal and shear stresses were found to have decreased by up to 30% after moderate levels of thermal cycling. After long term storage, the experimental measurements showed that the die normal stresses in the QFPs relaxed significantly (up to 40%), while the die shear stresses exhibited only small variations. In addition, the 85/85 hygrothermal exposures had strong effects, generating tensile die normal stress changes of up to 130 MPa. Upon fully redrying in reversibility tests, it was observed that the moisture-induced normal stress changes were not recovered. Good correlations were observed between the variations of sample weight (increases in moisture content) and the variations of the die normal and shear stress changes.Copyright

Material Characterization and Die Stress Measurement of Low Expansion PCB for Extreme Environments

This study characterizes a low expansion PCB composed of STABLCORreg/FR4 laminate that is suitable for flip-chip applications exposed to extreme operating environments from -55degC to +150degC. We demonstrate that the STABLCORreg/FR4 laminate exhibits approximately 80% reduction in CTE and greater stiffness characteristics as compared to typical FR4 material. Additionally, we demonstrate that the laminate successfully passes flammability, thermal vacuum stability, and toxicity testing as required for pressurized and un-pressurized Space applications. Fabricated (111) silicon test chips incorporating integral piezoresistive sensors were utilized to measure the die stresses during the underfill cure process, and in the final cured assemblies. Additionally, die stress measurements were performed as a function of temperature post cure with each PCB type. During the snap cure cycle of the underfill, changes in the stresses on the die surface contacting the underfill were observed due to encapsulant shrinkage. However, it was also found that the majority of the final assembly die stresses are built up during the cooling of the flip chip assembly after cure. The STABLCOR7FR4 laminate was found to have significantly lower magnitude of final assembly die stresses as compared to typical FR4 materials at most sensor locations

Measurement of Electronic Packaging Material Behavior and Flip Chip Die Stresses at Extreme Low Temperatures

High stresses in semiconductor die and other packaging elements can be developed in electronic assemblies subjected to extremely low ambient temperatures leading to reliability concerns. In this work, we have characterized and modeled the silicon die stresses occurring in flip chip assemblies at low temperatures. Stress measurements have been made at temperatures down to −180°C using test chips incorporating piezoresistive sensor rosettes. The obtained stress measurement data have been correlated with the predictions of nonlinear finite element models. A microtester has been used to characterize the stress-strain behavior of the solders and encapsulants from −180 to +150°C to aid in this modeling effort.© 2005 ASME

Stresses in Area Array Assemblies Subjected to Thermal Cycling

Thermal cycling accelerated life testing is often used to qualify area array packages (e.g. Ball Grid Arrays and Flip Chip) for various applications. Finite element life predictions for thermal cycling configurations are challenging due to the complicated temperature/time dependent constitutive relations and failure criteria needed for solders and encapsulants and their interfaces, aging/evolving material behavior (e.g. solders), difficulties in modeling plating finishes, the complicated geometries of typical electronic assemblies, etc. In addition, in-situ measurements of stresses and strains in assemblies subjected to temperature cycling is difficult because of the extreme environmental conditions and the fact that the primary materials/interfaces of interest (e.g. solder joints, die device surface, wire bonds, etc.) are embedded within the assembly (not at the surface). For these reasons, we really know quite little about the evolution of the stresses, strains, and deformations occurring within sophisticated electronic packaging geometries during thermal cycling. In our research, we are using test chips containing piezoresistive stress sensors to continuously characterize the in-situ die surface stress during long-term thermal cycling of several different area array packaging technologies including plastic ball grid array (PBGA) components, ceramic ball grid array (CBGA) components, and flip chip on laminate assemblies. The utilized (111) silicon test chips are able to measure the complete three-dimensional stress state (all 6 stress components) at each sensor site being monitored by the data acquisition hardware. The die stresses are initially measured at room temperature after packaging. The assemblies are then subjected to thermal cycling over various temperature ranges including 0 to 100 °C, −40 to 125 °C, and −55 to 125 °C, for up to 3000 thermal cycles. During the thermal cycling, sensor resistances at critical locations on the die device surface (e.g. the die center and die corners) are recorded. From the resistance data, the stresses at each site can be calculated and plotted versus time. The experimental observations show significant cycle-to-cycle evolution in the stress magnitudes due to material aging effects, stress relaxation and creep phenomena, and development of interfacial damage. The observed stress variations as a function of thermal cycling duration are also being correlated with the observed delaminations at the die surface (as measured using scanning acoustic microscopy (C-SAM)) and finite element simulations that include material constitutive models that incorporate thermal aging effects.Copyright

Die Stress Variation During Thermal Cycling Reliability Tests

Thermal cycling accelerated life testing is an established technique for thermo-mechanical evaluation and qualification of electronic packages. Finite element life predictions for thermal cycling configurations are challenging due to several reasons including the complicated temperature/time dependent constitutive relations and failure criteria needed for solders, encapsulants and their interfaces; aging/evolving material behavior for the packaging materials (e.g. solders); difficulties in modeling plating finishes; the complicated geometries of typical electronic assemblies; etc. In addition, in-situ measurements of stresses and strains in assemblies subjected to temperature cycling are difficult because of the extreme environmental conditions and the fact that the primary materials/interfaces of interest (e.g. solder joints, die device surface, wire bonds, etc.) are embedded within the assembly (not at the surface). For these reasons, little is known about the evolution of the stresses, strains, and deformations occurring within sophisticated electronic packaging geometries during thermal cycling. In this work, we have used test chips containing piezoresistive stress sensors to characterize the in-situ die surface stress during long-term thermal cycling of electronic packaging assemblies. Using (111) silicon test chips, the complete three-dimensional stress state (all 6 stress components) was measured at each rosette site by monitoring the resistance changes occurring in the sensors. The packaging configuration studied in this work was flip chip on laminate where 5 × 5 mm perimeter bumped die were assembled on FR-406 substrates. Three different thermal cycling temperature profiles were considered. In each case, the die stresses were initially measured at room temperature after packaging. The packaged assemblies were then subjected to thermal cycling and measurements were made either incrementally or continuously during the environmental exposures. In the incremental measurements, the packages were removed from the chamber after various durations of thermal cycling (e.g. 250, 500, 750, 1000 cycles, etc.), and the sensor resistances were measured at room temperature. In the continuous measurements, the sensor resistances at critical locations on the die device surface (e.g. die center and die corners) were recorded continuously during the thermal cycling exposure. From the resistance data, the stresses at each site were calculated and plotted versus time. The experimental observations show cycle-to-cycle evolution in the stress magnitudes due to material aging effects, stress relaxation and creep phenomena, and development of interfacial damage.Copyright

Chip-on-Beam and Hydrostatic Calibration of the Piezoresistive Coefficients on (111) Silicon

Stress sensing test chips are used to investigate die stresses arising from assembly and packaging operations. The chips incorporate resistor or transistor sensing elements that are able to measure stresses via the observation of the changes in their resistivity/mobility. The piezoresistive behavior of such sensors is characterized by three piezoresistive (pi) coefficients, which are electro-mechanical material constants. Stress sensors fabricated on the surface of the (111) silicon wafers offer the advantage of being able to measure the complete stress state compared to such sensors fabricated on the (100) silicon. However, complete calibration of the three independent piezoresistive coefficients is more difficult and one approach utilizes hydrostatic measurement of the silicon “pressure” coefficients. We are interested in stress measurements over a very broad range of temperatures, and this paper present the experimental methods and results for hydrostatic measurements of the pressure coefficient of both n- and p-type silicon over a wide range of temperatures and then uses the results to provide a complete set of temperature dependent piezoresisitive coefficients for the (111) silicon.Copyright