Masanobu Ikeda

Integration of organic low-k material with Cu-damascene employing novel process

In order to realize the fabrication of an ultra-large-scale-integrated (ULSI) circuit with high performance, a novel integration process for Cu-damascene structures employing a low dielectric constant (low-k) material as interlayer dielectric is proposed. In this process, a USG formed organic low-k material is used as a hard mask and a CMP stopper. This enables us to simplify the total process and fabricate two-level Cu metallization successfully.

A highly reliable nano-clustering silica with low dielectric constant (k<2.3) and high elastic modulus (E=10 GPa) for copper damascene process

A highly reliable nano-clustering silica (NCS) with low dielectric constant(k<2.3) and high elastic modulus (E=10 Gpa) for copper damascene process has been developed by controlling the size and distribution of pores in the NCS precursor. Using this material in a process compatible with the 90 nm technology node, we successfully demonstrated Cu wiring in NCS dielectrics.