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Featured researches published by Masanori Izumikawa.
IEEE Journal of Solid-state Circuits | 1997
Masanori Izumikawa; Hiroyuki Igura; Koichiro Furuta; H. Ito; H. Wakabayashi; K. Nakajima; Tohru Mogami; Tadahiko Horiuchi; Masakazu Yamashina
This paper describes a 0.25-/spl mu/m CMOS 0.9-V 100-MHz DSP core which is composed of a 2-mW 16-b multiplier-accumulator and a 1.5-mW 8-kb SRAM. High-speed operation with a supply of less than 1 V has been achieved by developing 0.25-/spl mu/m CMOS technology, reducing threshold voltage to 0.3 V, developing tristate inverter 3-2/4-2 adders for the multiplier, realizing small bit-line swing operation for the SRAM, and so on. The adder circuits operate faster than conventional adders at low supply voltages. In addition, short-circuit current and area for diffusion contact are reduced. Small bit-line swing operation has been realized by using a device-deviation immune sense amplifier. Leakage current during sleep mode was reduced by the use of high threshold voltage MOSFETs.
international solid-state circuits conference | 1995
Masanori Izumikawa; Hiroyuki Igura; Koichiro Furuta; Hiroshi Ito; H. Wakabayashi; K. Nakajima; Tohru Mogami; Tadahiko Horiuchi; Masakazu Yamashina
A 0.25 /spl mu/m CMOS 0.9 V 100 MHz 4 mW 2 mm/sup 2/ DSP core is composed of a 16 b multiplier, a 32 b adder, an 8 kb SRAM, and a PLL. Voltage-scalable circuits capable of operating at 0.5 V to 2.5 V and level-converting interface circuits applied to the DSP make it suitable for multiple-supply-voltage portable systems.
custom integrated circuits conference | 1995
Hiroyuki Igura; Masanori Izumikawa; Koichiro Furuta; Hiroshi Ito; H. Wakabayashi; K. Nakajima; Tohru Mogami; Tadahiko Horiuchi; Masakazu Yamashina
A 16-b multiplier-accumulator with stacked CMOS has been developed. It can be used for the digital signal processors which, as main parts of multimedia portable terminals, are required to have low power consumption and high processing speed. The stacked-CMOS logic circuit, which has high-speed and low-power characteristics, and optimization techniques are employed to attain a low power dissipation value of 2 mW at 100 MHz operation. Its area is 0.55 mm/sup 2/, and the transistor density is two times that of conventional multiplier-accumulators. The fabrication technology is a 0.25-/spl mu/m CMOS double layer Al process.
Archive | 1997
Masanori Izumikawa
Archive | 1998
Masanori Izumikawa
Archive | 1997
Masanori Izumikawa
Archive | 1997
Masanori Izumikawa
IEICE Transactions on Electronics | 1996
Masanori Izumikawa; Masakazu Yamashina
IEICE Transactions on Electronics | 1997
Masanori Izumikawa; Masakazu Yamashina
international solid-state circuits conference | 1995
Masanori Izumikawa; Hiroyuki Igura; Kazuo Furuta; Hiromasa Ito; Hitoshi Wakabayashi; Katsuto Nakajima; Tohru Mogami; Tadahiko Horiuchi; Masakazu Yamashina