Mojtaba Ebrahimi
Karlsruhe Institute of Technology
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Mojtaba Ebrahimi.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems | 2015
Fabian Oboril; Rajendra Bishnoi; Mojtaba Ebrahimi; Mehdi Baradaran Tahoori
Magnetic Random Access Memory (MRAM) is a very promising emerging memory technology because of its various advantages such as nonvolatility, high density and scalability. In particular, Spin Orbit Torque (SOT) MRAM is gaining interest as it comes along with all the benefits of its predecessor Spin Transfer Torque (STT) MRAM, but is supposed to eliminate some of its shortcomings. Especially the split of read and write paths in SOT-MRAM promises faster access times and lower energy consumption compared to STT-MRAM. In this paper, we provide a very detailed analysis of SOT-MRAM at both the circuit-and architecture-level. We present a detailed evaluation of performance and energy related parameters and compare the novel SOT-MRAM with several other memory technologies. Our architecture-level analysis shows that a hybrid-combination of SRAM for the L1-Data-cache, SOT-MRAM for the L1-Instruction-cache and L2-cache can reduce the energy consumption by 60% while the performance increases by 1% compared to an SRAM-only configuration. Moreover, the retention failure probability of SOT-MRAM is 27× smaller than the probability of radiation-induced Soft Errors in SRAM, for a 65 nm technology node. All of these advantages together make SOT-MRAM a viable choice for microprocessor caches.
design, automation, and test in europe | 2014
Mojtaba Ebrahimi; Adrian Evans; Mehdi Baradaran Tahoori; Razi Seyyedi; Enrico Costenaro; Dan Alexandrescu
Radiation-induced soft errors have become a key challenge in advanced commercial electronic components and systems. We present results of Soft Error Rate (SER) analysis of an embedded processor. Our SER analysis platform accurately models all generation, propagation and masking effects starting from a technology response model derived using TCAD simulations at the device level all the way to application masking. The platform employs a combination of empirical models at the device level, analytical error propagation at logic level and fault emulation at the architecture/application level to provide the detailed contribution of each component (flip-flops, combinational gates, and SRAMs) to the overall SER. At each stage in the modeling hierarchy, an appropriate level of abstraction is used to propagate the effect of errors to the next higher level. Unlike previous studies which are based on very simple test chips, analyzing the entire processor gives more insight into the contributions of different components to the overall SER. The results of this analysis can assist circuit designers to adopt effective hardening techniques to reduce the overall SER while meeting required power and performance constraints.
international conference on computer aided design | 2013
Mojtaba Ebrahimi; Fabian Oboril; Saman Kiamehr; Mehdi Baradaran Tahoori
As CMOS technology scales down into the nanometer regime, designers have to add pessimistic timing margins to the circuit as guardbands to avoid timing violations due to various reliability effects, in particular accelerated transistor aging. Since aging is workload-dependent, the aging rates of different paths are non-uniform, and hence, design time delay-balanced circuits become significantly unbalanced after some operational time. In this paper, an aging-aware logic synthesis approach is proposed to increase circuit lifetime with respect to a specific guardband. Our main objective is to optimize the design timing with respect to post-aging delay in a way that all paths reach the assigned guardband at the same time. In this regard, in an iterative process, after computing the post-aging delays, the lifetime is improved by putting tighter timing constraints on paths with higher aging rate and looser constraints on paths which have less post-aging delay than the desired guarband. The experimental results shows that the proposed approach improves circuit lifetime in average by more than 3X with negligible impact on area. Our approach is implemented on top of a commercial synthesis toolchain, and hence scales very well.
design, automation, and test in europe | 2012
Abbas Mohammadi; Mojtaba Ebrahimi; Alireza Ejlali; Seyed Ghassem Miremadi
In this paper, we have proposed a fast and easy-to-develop FPGA-based fault injection technique. This technique uses the Altera FPGAs debugging facilities in order to inject SEU fault model in both flip-flops and memory units. Since this method uses the FPGAs built-in facilities, it imposes a negligible performance and area overhead on the system. The experimental results on Leon2 processor shows that the proposed technique is on average four orders of magnitude faster than a simulation-based fault injection.
Microelectronics Reliability | 2014
Mojtaba Ebrahimi; Abbas Mohammadi; Alireza Ejlali; Seyed Ghassem Miremadi
Abstract By technology down scaling in nowadays digital circuits, their sensitivity to radiation effects increases, making the occurrence of soft errors more probable. As a consequence, soft error rate estimation of complex circuits such as processors is becoming an important issue in safety- and mission-critical applications. Fault injection is a well-known and widely used approach for soft error rate estimation. Development of previous FPGA-based fault injection techniques is very time consuming mainly because they do not adequately exploit supplementary FPGA tools. This paper proposes an easy-to-develop and flexible FPGA-based fault injection technique. This technique utilizes debugging facilities of Altera FPGAs in order to inject single event upset (SEU) and multiple bit upset (MBU) fault models in both flip-flops and memory units. As this technique uses FPGA built-in facilities, it imposes negligible performance and area overheads on the system. The experimental results show that the proposed technique is on average four orders of magnitude faster than a pure simulation-based fault injection. These features make the proposed technique applicable to industrial-scale circuits.
design automation conference | 2013
Mojtaba Ebrahimi; Hossein Asadi; Mehdi Baradaran Tahoori
With the emerging nanoscale CMOS technology, Multiple Event Transients (METs) originated from radiation strikes are expected to become more frequent than Single Event Transients (SETs). In this paper, a fast and accurate layout-based Soft Error Rate (SER) estimation technique with consideration of both SET and MET fault models is proposed. Unlike previous techniques in which the adjacent MET sites are obtained from logic-level netlist, we perform a comprehensive layout analysis to extract MET adjacent cells. It is shown that layout-based technique is the only effective solution for identification of adjacent cells as netlist-based techniques significantly underestimate the overall SER.
Journal of Electronic Testing | 2013
Liang Chen; Mojtaba Ebrahimi; Mehdi Baradaran Tahoori
Due to the continuous technology scaling, soft error becomes a major reliability issue at nanoscale technologies. Single or multiple event transients at low levels can result in multiple correlated bit flips at logic or higher abstraction levels. Addressing this correlation is essential for accurate low-level soft error rate estimation, and more importantly, for the cross-level error abstraction, e.g. from bit errors at logic level to word errors at register-transfer level. This paper proposes a novel error estimation method to take into consideration both signal and error correlations. It unifies the treatment of error-free signals and erroneous signals, so that the computation of error probabilities and correlations can be carried out using techniques for signal probabilities and correlations calculation. The proposed method not only reports accurate error probabilities when internal gates are impaired by soft errors, but also gives quantification of the error correlations in their propagation process. This feature enables our method to be a versatile technique used in high-level error estimation. The experimental results validate our proposed technique showing that compared with Monte-Carlo simulation, it is 5 orders of magnitude faster, while the average inaccuracy of error probability estimation is only 0.02.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems | 2015
Mojtaba Ebrahimi; Adrian Evans; Mehdi Baradaran Tahoori; Enrico Costenaro; Dan Alexandrescu; Vikas Chandra; Razi Seyyedi
Radiation-induced soft errors have become a key challenge in advanced commercial electronic components and systems. We present the results of a soft error rate (SER) analysis of an embedded processor. Our SER analysis platform accurately models generation, propagation, and masking effects starting from a technology response model derived using TCAD simulations at the device level all the way to application masking. The platform employs a combination of accurate models at the device level, analytical error propagation at gate level, and fault emulation at the architecture/application level to provide the detailed contribution of each component (flip-flops, combinational gates, and SRAMs) to the overall SER. At each stage in the modeling hierarchy, an appropriate level of abstraction is used to propagate the effect of errors to the next higher level. Unlike previous studies which are based on very simple test chips, analyzing the entire processor gives more insight into the relative contributions of combinational and sequential SER. The results of this analysis can assist circuit designers to adopt effective hardening techniques to reduce the overall SER while meeting the required power and performance constraints.
international symposium on quality electronic design | 2014
Rajendra Bishnoi; Fabian Oboril; Mojtaba Ebrahimi; Mehdi Baradaran Tahoori
Spin Transfer Torque (STT) is a promising emerging memory technology because of its various advantages such as non-volatility, high density, virtually infinite endurance, scalability and CMOS compatibility. Despite all these features, high write current is still a challenge for its widespread use. When writing a value that is already stored, a significant current flows through the Magnetic Tunnel Junction (MTJ) cell which is almost the same as that required to flip the stored data. This increases the total power consumption of the memory. To address this issue, we propose a technique which can avoid unnecessary write operations with bit-level granularity. Our technique can save 68.9% of the total write power consumption with a minor area overhead (0.68 %) and only a small timing penalty (1.33 %).
asia and south pacific design automation conference | 2013
Mojtaba Ebrahimi; Liang Chen; Hossein Asadi; Mehdi Baradaran Tahoori
With continuous technology downscaling, the rate of radiation induced soft errors is rapidly increasing. Fast and accurate soft error vulnerability analysis in early design stages plays an important role in cost-effective reliability improvement. However, existing solutions are suitable for either regular (a.k.a address-based such as memory hierarchy) or irregular (random logic such as functional units and control logic) structures, failing to provide an accurate system-level analysis. In this paper, we propose a hybrid approach integrating architecture-level and logic-level techniques to accurately estimate the vulnerability of all regular and irregular structures within a microprocessor. All error propagation and masking scenarios are carefully handled among these structures. We have evaluated the vulnerability of the OR1200 processor using the proposed approach. Comparison with statistical fault injection shows an average inaccuracy of less than 7% with five orders of magnitude improvement in runtime.