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Dive into the research topics where Nobuhiro Komine is active.

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Featured researches published by Nobuhiro Komine.


Optical Microlithography XVII | 2004

Method of robust pattern design for lens aberration

Nobuhiro Komine; Kenji Konomi; Keita Asanuma; Kazuo Tawarayama; Tatsuhiko Higashiki

Recently, the critical dimension (CD) abnormality due to lens aberrations of exposure tool has become one of the critical issues in production of semiconductor devices. The most remarkable feature of CD abnormality due to lens aberration is asymmetry of symmetric twin pattern. And the asymmetry is only caused by a particular aberration because the influence on CD abnormality of lens aberration depends on the device pattern shape. Therefore, it is important to know the interaction of the device pattern shape with lens aberrations, and to ensure that consideration of the interaction is reflected in the design of device. This paper introduces a pattern design methods robust to lens aberration is based on Zernike Sensitivity (ZS) method. We conclude that our method modifies a pattern sensitive to lens aberration so that it becomes a pattern robust to lens aberration without reduction of the depth of focus (DOF).


Data Analysis and Modeling for Process Control | 2004

Mix-and-match overlay method by compensating dynamic scan distortion error

Takuya Kono; Manabu Takakuwa; Keita Asanuma; Nobuhiro Komine; Tatsuhiko Higashiki

This paper discusses the compensation method and APC system to reduce errors in mix and matching overlay between scanners. We proposed the compensation model for intra-field errors in mix and matching. And we developed the advanced APC system also to improve dynamic scan distortion using the compensation model.


Proceedings of SPIE | 2010

Overlay sampling optimization by operating characteristic curves empirically estimated

Kentaro Kasa; Masafumi Asano; Takahiro Ikeda; Manabu Takakuwa; Nobuhiro Komine; Kazutaka Ishigo

Operating Characteristic (OC) curves, which are probabilities of lot acceptance as a function of fraction defective p, are powerful tools for visualizing risks of lot acceptance errors. The authors have used OC curves for the overlay sampling optimization, and found that there are some differences in probability of acceptance between theoretical calculation and empirical estimation. In this paper, we derive a theoretical formulation of the probability of acceptance for several simple cases by decomposing overlay errors, and show that the origin of the differences is the use of stratified sampling in overlay inspection.


Archive | 2003

Monitoring method, exposure method, a manufacturing method for a semiconductor device, including an etching method and exposure processing unit

Masafumi Asano; Nobuhiro Komine; Soichi Inoue


Archive | 2003

Reticle, exposure monitoring method, exposure method and manufacturing method for semiconductor device

Nobuhiro Komine


Archive | 2008

PHOTOMASK, PHOTOMASK SUPERIMPOSITION CORRECTING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Nobuhiro Komine; Kazutaka Ishigo; Noriaki Sasaki; Masayuki Hatano


Archive | 2013

IMPRINT APPARATUS, IMPRINT METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Takeshi Koshiba; Nobuhiro Komine


Archive | 2012

PATTERNING METHOD AND TEMPLATE

Yosuke Okamoto; Kazuo Tawarayama; Nobuhiro Komine


Archive | 2004

Apparatus for correcting a plurality of exposure tools, method for correcting a plurality of exposure tools, and method for manufacturing semiconductor device

Nobuhiro Komine; Shigeki Nojima; Keita Asanuma


Archive | 2012

FLARE MEASURING METHOD, REFLECTIVE MASK, AND EXPOSURE APPARATUS

Masaru Suzuki; Nobuhiro Komine

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