P. K. Skorobogatov

Selection of optimal parameters of laser radiation for simulating ionization effects in silicon bulk-technology microcircuits

A method for increasing the efficiency of using laser radiation (LR) energy for the formation of high levels of the equivalent dose rate, which is based on reducing the radiation wavelength, is substantiated. It is shown that the optimal range of LR energies for simulation of bulk ionization effects in CMOS microcircuits fabricated by bulk technology lies in ranges from 1.08 to 0.97 μm.

Experimental studies of the adequacy of laser simulations of dose rate effects in integrated circuits and semiconductor devices

Comparative experimental studies of the responses of typical representatives of integrated circuits (ICs) and semiconductor devices (SDs) with various designs to high-energy pulsed ionizing radiations from simulation facilities and laser simulators have been carried out. The differences between the hardness values under exposure to radiations from simulation facilities and laser simulators have been found to be no larger than the dosimetry errors when the power supply ionization current calibration procedure is used. The shapes of power supply ionization currents and output voltages in the ICs are almost identical qualitatively. The levels and patterns of the functional IC failures are completely identical for both types of radiation sources. As a result, we have proven that a joint application of simulation facilities and laser simulators provides a rational combination of the reliability and efficiency of testing ICs and SDs for hardness to dose rate.

Simulating the response of SOS CMOS building blocks to pulsed ionizing irradiation

Device-and-process simulation of the response exhibited by SOS CMOS building blocks to pulsed ionizing irradiation is considered. Computer and laser simulations are conducted. For dose-rate effects, energetically optimal simulation wavelengths are found to range from 0.75 to 0.90 μm.

Optimization of laser irradiation parameters for simulation of a transient radiation response in thin-film silicon-based microcircuits

A method for improving the efficiency of using laser radiation (LR) energy is discussed to implement high levels of dose rates by reducing the radiation wavelength. Generally, the optimal range of LR energy for the simulation of the transient radiation response in CMOS SOS/SOI microcircuits depends on the technological characteristics of production and ranges from 0.9 to 0.75 μm.

The Impact of Plane-Polarized Unfocused Laser Radiation on Bulk Ionization in Deep-Submicron Modern ICs

Manifestation of the dose rate effects is strongly depends on the laser polarization direction for the ICs, which technology is less than the laser wavelength. There are several approaches to reduce this influence in deep-submicron ICs.

Radiation effects in piezoelectric sensor

These Total dose effects in piezoelectric sensor PKGS-90LC-R are investigated. Experimental results comply with the supposition about accumulation of radiation-induced charge and its influence on the effective field in piezoelectric.

An analysis of the temperature effect on the impulse electric strength of CMOS chips

The results of the experimental studies of CD4001BCN-NL CMOS chips on the impulse electric strength (IES) at two ambient temperatures (+25°C and +125°C) are given. The analysis of the obtained results showed that the ambient temperature effects on the impulse electric strength indices of the studied chip. The value and behavior of the IES can be described by the p-n-junction thermal damage model.

The impact of laser polarization direction on local dose rate effects simulation for modern integrated circuits

The effect of the direction of laser polarization on the transient radiation response of an IC memory device implemented using CMOS technology 0.18 μm is estimated. The effect of laser polarization is investigated both for local exposure and exposure on the entire crystal. It is shown that the direction of laser polarization should be taken into account when simulating local dose rate effects.

The Impact of the Polarization Orientation on Laser SEE Modeling in Complex ICs

Numerical and experimental evaluation of the influence of laser radiation polarization orientation on ionization response of 180-nm and 90-nm CMOS ICs is performed. Comparative research is carried out to determine how the polarization of various sized laser beams affects the parameters of IC ionization response. The necessity of considering the orientation of laser radiation polarization for laser local radiation effect simulation is shown.

Wavelength influence on CMOS SOS IC dose rate laser simulation efficiency

Dose rate effects wavelength dependence under pulsed laser irradiation of typical CMOS thin-film structure is investigated. The optimal wavelength for maximum laser simulation efficiency is defined.