Armen V. Sogoyan

Methods for the Prediction of Total-Dose Effects on Modern Integrated Semiconductor Devices in Space: A Review

Ionizing-radiation effects on space microelectronics are addressed. Major approaches to the radiation-hardness evaluation of IC components in terms of total-dose effects at low dose rates are reviewed. The main mechanisms and kinetic models of radiation degradation are discussed from the standpoint of the prediction of IC radiation response.

Temperature Dependence of MCU Sensitivity in 65 nm CMOS SRAM

The temperature dependence of single-event upset multiplicity in 65 nm CMOS SRAM was investigated in this paper. Experimental results show significant increase of upset multiplicity over a temperature range of 300 to 400 K. Main physical mechanisms leading to the increase of the multiplicity of upsets at elevated temperatures were studied using three-dimensional (3-D) device simulations. A major role of upset voltage decrease and temperature dependence of the parasitic bipolar effect was established. Simulation results can be used for maximal upset multiplicity estimation.

Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment

A new analytical model for enhanced yield of radiation-induced charge in low-field thick oxides due to lesser recombination under low-dose-rate and high temperature conditions has been developed. Numerical simulations are quantitatively well agreed with experimental data

Compendium of SEE comparative results under ion and laser irradiation

Compendium of SEU, SEL, SET, SEB and SEGR comparative results under ion irradiation and focused laser beam are presented. The possible sources of discrepancies between ion and laser results and the ways of data correction are discussed.

Compendium of TID Comparative Results under X-Ray, Gamma and LINAC Irradiation

Compendium of TID comparative results under X-ray, Gamma and LINAC irradiation is presented. The new joint method of X-ray and gamma irradiation employment for TID investigations is proposed. Experiment results successfully confirm the validity of the proposed TID testing approach.

Prediction of Local and Global Ionization Effects on ICs: The Synergy between Numerical and Physical Simulation

A review is presented of an integrated approach to hardness assurance, embracing single-event and global pulsed-ionization effects. The strategy essentially combines numerical and physical simulation in order to obtain reliable data on IC radiation response with minimum expenditure of time and money. The way in which calculations and measurements should be combined depends on the type of IC and the radiation conditions. It is shown that the cost of measurement can be reduced by using laboratory radiation simulators and each form of radiation of interest can be simulated with an agent readily available for the tester. Particular coverage is given to simulation with lasers.

The automated system for parametric characterization of the input and output blocks in digital ICs

The article is devoted to an automated system for parameters monitoring of the input and output chains of the logic ICs in order to identify its manufacturer. The system based on National Instruments PXI platform. The hardware and software parts of the system, as well as the measurement process and results threat, are observed.

Method for online nondestructive hardness assurance for CMOS LSI circuits realized in SOS technology

The radiation performance of digital CMOS circuits realized in SOS technology is investigated in relation to the radiation-induced charge at the silicon-sapphire interface. A nondestructive hardness-assurance method based on radiation annealing is proposed, and reasons are given why this approach should be feasible. The limits of applicability of the method are assessed.

The Impact of Plane-Polarized Unfocused Laser Radiation on Bulk Ionization in Deep-Submicron Modern ICs

Manifestation of the dose rate effects is strongly depends on the laser polarization direction for the ICs, which technology is less than the laser wavelength. There are several approaches to reduce this influence in deep-submicron ICs.

Radiation effects in piezoelectric sensor

These Total dose effects in piezoelectric sensor PKGS-90LC-R are investigated. Experimental results comply with the supposition about accumulation of radiation-induced charge and its influence on the effective field in piezoelectric.