Alexander I. Chumakov

Local laser irradiation technique for SEE testing of ICs

The results of local laser simulation for estimation of SEE parameters are presented. Simulation method is based on the local laser irradiation of VLSI by measuring response in power supply circuits and determining laser threshold energy of SEE.

System on module total ionizing dose distribution modeling

The paper presents total ionizing dose (TID) distribution due to trapped electrons and protons at the system on module (SOM) surface. TID calculation was made in 3D_SPACE software (Specialized Electronic Systems). The main goal of this paper is a more precise definition of the radiation hardness requirements for space electronics. A huge TID level dispersion for different ICs in SOM is demonstrated. Basic Al sphere approach for TID spacecraft requirements calculations is shown to provide overestimated conservative results.

Single event latchup threshold estimation based on laser dose rate test results

Single event latchup is one of the dominant CMOS IC failure effects in the space environment. Latchup comparative experimental and software simulation research were performed at various laser wavelengths, pulse durations and spot sizes. Single event to dose rate latchup correlation was found that provides the possibility of SEL threshold energy prediction based on laser dose rate test results.

Flash memory cells data loss caused by total ionizing dose and heavy ions

The paper provides experimental results of flash memory loss data investigation. Possible mechanisms of charge loss from storage element are reviewed. We provide some guidelines for flash memory evaluation to space application.

Methods for the Prediction of Total-Dose Effects on Modern Integrated Semiconductor Devices in Space: A Review

Ionizing-radiation effects on space microelectronics are addressed. Major approaches to the radiation-hardness evaluation of IC components in terms of total-dose effects at low dose rates are reviewed. The main mechanisms and kinetic models of radiation degradation are discussed from the standpoint of the prediction of IC radiation response.

Evaluation of multibit upsets in integrated circuits under heavy charged particles

The results of computational modeling of the ionization response in VLSI elements under the ingress of a separate charged particle into its passive or active region are presented. In this study, the conditions for the appearance of multibit upsets, which are formed due to the diffusion collection mechanism of the excess charge, are substantiated. It is shown that the maximal VLSI sensitivity to multiple since upsets occurs with the ingress of a nuclear particle into passive regions arranged equidistantly from the location of a nuclear particle.

Experimental studies of the adequacy of laser simulations of dose rate effects in integrated circuits and semiconductor devices

Comparative experimental studies of the responses of typical representatives of integrated circuits (ICs) and semiconductor devices (SDs) with various designs to high-energy pulsed ionizing radiations from simulation facilities and laser simulators have been carried out. The differences between the hardness values under exposure to radiations from simulation facilities and laser simulators have been found to be no larger than the dosimetry errors when the power supply ionization current calibration procedure is used. The shapes of power supply ionization currents and output voltages in the ICs are almost identical qualitatively. The levels and patterns of the functional IC failures are completely identical for both types of radiation sources. As a result, we have proven that a joint application of simulation facilities and laser simulators provides a rational combination of the reliability and efficiency of testing ICs and SDs for hardness to dose rate.

Single-event-effect sensetivity characterization of LSI circuits with a laser-based and a pulsed gamma-ray testing facilities used in combination

Evaluation formulas are presented for equivalent heavy-ion linear energy transfer in the context of LSI-circuit sensetivity to single-event effects, based on local laser test data. The method suggested is validated for calculating the linear energy transfer from laser-pulse energy on the basis of radiation-response measurements on pulsed gamma-ray test sets. The method is free from errors related to the uncertainty in electrical properties of semiconductor structures.

Evaluation of Moderately Focused Laser Irradiation as a Method for Simulating Single-Event Effects

A numerical and a physical simulation are reported of single-event upsets and single-event latchups by laser irradiation with spot diameters ranging from 5 to 50 μm. It is shown that the method can be useful for estimating the threshold values of linear energy transfer if the laser spot covers a number of sensitive regions.

Evaluation of sensitivity parameters for single event latchup effect in CMOS LSI ICs by pulsed laser backside irradiation tests

The results of computation-experimental modeling of single-event latchup effects under the laser radiation focused on the IC crystal backside—the substrate side—are presented. Possibilities of applying the technique of local laser irradiation to evaluate equivalent linear energy transfer of heavy ions in the case of the laser irradiation from the substrate side of IC crystal are analyzed. The experimental results obtained using the pulsed laser installation and accelerators of charged particles for a series of modern LSI ICs are compared.