A. N. Egorov

Single event latchup threshold estimation based on laser dose rate test results

Single event latchup is one of the dominant CMOS IC failure effects in the space environment. Latchup comparative experimental and software simulation research were performed at various laser wavelengths, pulse durations and spot sizes. Single event to dose rate latchup correlation was found that provides the possibility of SEL threshold energy prediction based on laser dose rate test results.

Selection of optimal parameters of laser radiation for simulating ionization effects in silicon bulk-technology microcircuits

A method for increasing the efficiency of using laser radiation (LR) energy for the formation of high levels of the equivalent dose rate, which is based on reducing the radiation wavelength, is substantiated. It is shown that the optimal range of LR energies for simulation of bulk ionization effects in CMOS microcircuits fabricated by bulk technology lies in ranges from 1.08 to 0.97 μm.

Evaluation of Moderately Focused Laser Irradiation as a Method for Simulating Single-Event Effects

A numerical and a physical simulation are reported of single-event upsets and single-event latchups by laser irradiation with spot diameters ranging from 5 to 50 μm. It is shown that the method can be useful for estimating the threshold values of linear energy transfer if the laser spot covers a number of sensitive regions.

Study of SEL and SEU in SRAM Using Different Laser Techniques

Single event upset (SEU) and single event latchup (SEL) laser testing results of SRAM CY62256 using both focused and local laser irradiation techniques are presented. Variable laser wavelength was used for SEU and SEL threshold linear energy transfer (LET) estimation. The backside laser irradiation technique was also applied. Laser testing results were compared to heavy ion testing ones.

Optimization of laser irradiation parameters for simulation of a transient radiation response in thin-film silicon-based microcircuits

A method for improving the efficiency of using laser radiation (LR) energy is discussed to implement high levels of dose rates by reducing the radiation wavelength. Generally, the optimal range of LR energy for the simulation of the transient radiation response in CMOS SOS/SOI microcircuits depends on the technological characteristics of production and ranges from 0.9 to 0.75 μm.

Femtosecond Laser Simulation Facility for SEE IC Testing

The new SEE laser simulation facility based on femtosecond laser source with tunable pulse duration is presented, and its most important features are discussed. The influence of laser pulse duration on simulation results is observed.

Laser equipment for hardness evaluation of semiconductor elements exposed to heavy charged particles (Review)

A review of laser devices that are currently used to perform hardness evaluation of microelectronic devices that are exposed to heavy charged particles, with respect to local radiation effects is presented. A brief classification of ionization effects in semiconductors caused by single heavy charged particles is provided. The possibility of using focused pulse-laser radiation for research on these effects is validated. A general approach to the construction of test systems that are based on picosecond lasers with sharp beam focusing systems is presented. The technical requirements for the basic modules of such systems are substantiated. The parameters of the domestic PICO-3 and PICO-4 laser test devices are compared to their foreign analogues and the means of their further improvement are given. The technical and operational characteristics of these devices that allow them to be used in various research tasks that require selective (with a submicron spatial resolution) object excitation by ultrashort laser pulses and recording of its response with exact timing of the moment of excitation, as well as for various precise technological operations, are discussed.

The Impact of Plane-Polarized Unfocused Laser Radiation on Bulk Ionization in Deep-Submicron Modern ICs

Manifestation of the dose rate effects is strongly depends on the laser polarization direction for the ICs, which technology is less than the laser wavelength. There are several approaches to reduce this influence in deep-submicron ICs.

The impact of laser polarization direction on local dose rate effects simulation for modern integrated circuits

The effect of the direction of laser polarization on the transient radiation response of an IC memory device implemented using CMOS technology 0.18 μm is estimated. The effect of laser polarization is investigated both for local exposure and exposure on the entire crystal. It is shown that the direction of laser polarization should be taken into account when simulating local dose rate effects.

The Impact of the Polarization Orientation on Laser SEE Modeling in Complex ICs

Numerical and experimental evaluation of the influence of laser radiation polarization orientation on ionization response of 180-nm and 90-nm CMOS ICs is performed. Comparative research is carried out to determine how the polarization of various sized laser beams affects the parameters of IC ionization response. The necessity of considering the orientation of laser radiation polarization for laser local radiation effect simulation is shown.