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Padraic Shafer

IBM

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Publication

Featured researches published by Padraic Shafer.

Archive | 2003

Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates

Richard A. Conti; Prakash C. Dev; David M. Dobuzinsky; Daniel C. Edelstein; Gill Yong Lee; Kia-Seng Low; Padraic Shafer; Alexander Simpson; Peter Wrschka

Archive | 2003

Filling high aspect ratio isolation structures with polysilazane based material

Michael P. Belyansky; Rama Divakaruni; Laertis Economikos; Rajarao Jammy; Kenneth T. Settlemyer; Padraic Shafer

Archive | 2002

METHOD AND STRUCTURE FOR SALICIDE TRENCH CAPACITOR PLATE ELECTRODE

Michael P. Chudzik; Jack A. Mandelman; Carl J. Radens; Rajarao Jammy; Kenneth T. Settlemyer; Padraic Shafer; Joseph F. Shepard

Archive | 2001

Liner with poor step coverage to improve contact resistance in W contacts

Roy C. Iggulden; Padraic Shafer; Werner Robl; Kwong Hon Wong

Archive | 2004

Method for filling up separation structure having high aspect ratio with material based on polysilazane

Michael P. Belyansky; Rama Divakaruni; Laertis Economikos; Rajarao Jammy; Jr Kenneth T Settlemyer; Padraic Shafer; ケネス・ティー・セトルマイヤー・ジュニア; パドライク・シー・シェーファー; マイケル・ピー・ベリャンスキー; ラーエルティス・エコノミコス; ラーマ・ディバカルーニ; ラジャラオ・ジャミー

Archive | 2002

Semiconductor method and structure for simultaneously forming a trench capacitor dielectric and trench sidewall device dielectric

Michael P. Chudzik; Rajarao Jammy; Carl J. Radens; Kenneth T. Settlemyer; Padraic Shafer; Joseph F. Shepard

Archive | 2006

Fet structure using disposable spacer and stress inducing layer

Wenhe Lin; Randy W. Mann; Padraic Shafer; Christopher V. Baiocco; Zhijoing Luo; Haining S. Yang; Xiangdong Chen

Archive | 2004

Method of filling high aspect ratio isolation structure with polysilazane based material in silicon integrated circuits having at least one p-n junction or dissimilar material interface prior to isolation structure buildup

Michael P. Belyansky; Rama Divakaruni; Laertis Economikos; Rajarao Jammy; Kenneth T. Settlemyer; Padraic Shafer

Archive | 2002

Low Cu percentages for reducing shorts in AlCu lines

Roy C. Iggulden; Padraic Shafer; Kwong Hon Wong; Michael M. Iwatake; Jay W. Strane; Thomas Goebel; Donna D. Miura; Chet Dziobkowski; Werner Robl; Brian Hughes

Archive | 2002

Filling a damascene structure involves coating damascene structure by liner providing poor step coverage, depositing tungsten by chemical vapor deposition, and performing metal isolation process

Roy C. Iggulden; Werner Robl; Padraic Shafer; Kwong Hon Wong

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Roy C. Iggulden

IBM

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Kwong Hon Wong

IBM

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Werner Robl

IBM

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Rajarao Jammy

IBM

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Donna D. Miura

IBM

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Jay W. Strane

IBM

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Kenneth T. Settlemyer

IBM

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Michael M. Iwatake

IBM

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Thomas Goebel

IBM

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Chester T. Dziobkowski

IBM

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