Patrick Reynaud

SOI substrate readiness for 22/20 nm and for fully depleted planar device architectures

Fully depleted (FD) MOSFET architecture for sub-32 nm technology node requires a new SOI substrate fabrication to meet all the stringent specifications imposed by a FD device. Ultra Thin SOI (UTSOI) targets planar device architectures, stressing specifications for thickness uniformity. Also Ultra Thin Burried Oxyde (UTBOx) offers additional benefits such as the application of back bias, for example enhancing device stability or threshold voltage tuning. In this paper, we discuss the Smart CutTM technology capability for both UTSOI and UTBOx substrate design with the quality and specifications that meet the future FD technology requirements.

Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes

The Hot Carrier (HC) reliability of NMOS transistors fabricated on biaxially tensile-strain SOI substrates (sSOI) is compared to that of devices fabricated on standard unstrained SOI substrates. It is shown that sSOI-based devices not only exhibit a 10% higher performance in term of ION/IOFF but also show superior HC reliability at same drive current. This reliability improvement may be explained by a better interface quality for sSOI films.