Peter J. Lindgren

Through-silicon vias enable next-generation SiGe power amplifiers forwireless communications

We feature a 0.35-µm SiGe BiCMOS technology (SiGe 5PAe) that is optimized for power amplifier (PA) applications. The key feature of this technology is a novel low-inductance ground to the package using through-silicon vias (TSVs) that results in a competitive solution for future multiband and multimode PA integration. The tungsten-filled, multifinger, bar-shaped TSV delivers more than a 75% reduction in inductance compared to a traditional wirebond. This enables higher frequency applications with a roughly 20% reduction in die area without compromising the technology reliability for use conditions in a low-cost plastic QFN (quad flat no leads) package. In this paper we demonstrate the commercial feasibility of the TSV, its RF performance, its reliability, and its usefulness in a demanding WiMAX® (Worldwide Interoperability for Microwave Access) PA application.

A 0.35 μm SiGe BiCMOS technology for power amplifier applications

In this paper we introduce, a state-of-the-art SiGe BiCMOS power amplifier technology that features two NPNs with 40 GHz / 6.0 V & 27 GHz / 8.5 V (fT - BVceo) respectively, a novel low inductance metal ground through-silicon-via (TSV), integrated on a low-cost 0.35 μm lithography node with 3.3 V / 5.0 V dual-gate CMOS technology and high-quality passives on a 50 Ω.cm substrate.