Philippe Benech

65-, 45-, and 32-nm Aluminium and Copper Transmission-Line Model at Millimeter-Wave Frequencies

An improved analytical model of the CMOS 65-, 45-, and 32-nm silicon technology integrated transmission line is proposed. This model is derived from previous classical ones used for printed circuits board lines. Improvements have been performed to take into account the size of integrated lines. The study is validated up to millimeter-wave frequencies for different linewidths realized with various metal levels. Accurate results allow the model to be implemented in commercial computer-aided design software commonly used for millimeter-wave designs. A comparison with commercial tools is carried out.

Geometrical impact on RF performances of broadband ESD self protected transmission line in advanced CMOS technologies

Advanced CMOS technologies provide an easy way to realize radio-frequency integrated circuits (RFICs). However, transistor gates are getting smaller and electrostatic discharge (ESD) issues become more significant. Unfortunately, parasitic capacitance of the ESD protection limits the operating bandwidth of the RFICs. The size (i.e. die area) of ESD protection is also of concern in RFICs. This paper presents results of transmission line with ESD protection devices able to be implemented in an I/O pad in advanced CMOS technologies.

Transmission line with 2-kV HBM broadband ESD protection using BIMOS and SCR in advanced CMOS technologies

Advanced CMOS technologies provide an easier way to realize radio-frequency integrated circuits (RFICs). However, transistor gates are getting smaller and electrostatic discharges (ESD) issues become more significant. Unfortunately, ESD protections parasitic capacitance limits the operating bandwidth of the RFICs. ESD protection size dimensions are also an issue to protect RFICs. This paper presents measurements results of ESD protection devices able to be implemented in an I/O pad in advanced CMOS technologies.

High frequency characterization and modeling of single metallic nanowire

The feasibility of using metallic nanowires (NWs) for microwave interconnect application is very attractive. This paper presents RF characterizations of aluminum (Al) nanowires (NWs) up to 65 GHz. Coplanar waveguide (CPW) test structures integrating with NWs of different lengths are designed and fabricated. From the measured S-parameters, the frequency-dependent electrical properties of the NWs can be found. Equivalent-circuit modeling combined with ADS Momentum is used to simulate the CPW devices under test. After comparing the theoretical and measured values, new circuit elements are deduced. From which, contact impedance can be determined accurately. The test setup proposed is useful for determination the actual conductivity and contact impedance of any metallic NW over a wide range of frequencies.

Industrial combining RF and system test of microwave devices using QPSK modulation

Vector Network Analyzer is considered as the classical characterization instrument for RF-devices but it requires time, equipments and increases the cost of tested equipments. A new method is presented and suggested for industrial test of microwave devices. This procedure is based on EVM system-parameter linked to transmission S-parameter. The procedure of the test is easier and six times faster than VNA test. A single value of EVM allows knowing the functionality of the device and few points describe the RF-device characteristics. First tests were done on Butterworth filters of different orders.

Determination of refractive index variation of a glass-integrated optical waveguide by the acousto-optic effect

Ion exchange on a glass substrate is now a well-known technology that enables the realization of optical waveguide devices. In recent years, the hybridization of ion-exchanged glass waveguides has become a promising method for functional integration. In this context, an integrated Mach–Zehnder interferometer (MZI), made by ion exchange on a glass substrate, was used to realize an acousto-optic modulator. Over one arm of the MZI a PZT ceramic driven by a high-voltage signal was glued. The acoustic waves cross the light waveguide and locally modify the refractive index of the glass. The optical intensity observed at the output of the interferometer varies according to the piezoelectric ceramic excitation. This component is used to find the relation between the refractive index change induced and the applied stress. Measurements were made for two linear polarizations: TE and TM. The proposed method was validated on a specific glass substrate and can be directly extended to any kind of glass.

Test structure definition for dummy metal filling strategy dedicated to advanced integrated RF inductors

A complete strategy to manage dummy fills inside a large spectrum of integrated RF inductors realized in a 0.13 mum CMOS technology using a dual damascene copper back end of line (BEOL) is presented here. Thanks to the developed test structures, their RF characterization, and a design of experiment (DOE) modeling analysis, it has been possible to determine the right metal fill density to insert inside inductors in order to be compliant with digital metal density rules without degrading their electrical performances.

Innovative and Complete Dummy Filling Strategy for RF Inductors Integrated in an Advanced Copper BEOL

A complete strategy to manage dummy fills inside and underneath a large spectrum of integrated RF inductors realized in a 0.13 mum CMOS technology using a Damascene Copper Back End of Line (BEOL) is presented here. The main motivation of this paper is first to evaluate through a Design Of Experiment (DOE) modeling, the impact on RF inductor performances of dummy fills inserted inside or underneath the coils, and then determine the right metal fill density to insert to be compliant with Digital metal density rules without degrading their electrical performances.

Outdoor meteorological effects on UHF RFID phase shift: Experimental simulations

The present study investigates meteorological factors that affect the phase of RFID passive tags at 868 MHz, in outdoor conditions. The study identifies the effect of the water on the antennas, the temperature of the cables and tags, the moisture of the tag support, and the atmospheric conditions. These effects could lead to over 8 radians phase drift, over a year in a typical environment. That leads to a possible yearly error of 20 centimeters in a typical outdoor ranging application. The article proposes techniques to correct those effects, in order to increase the accuracy of phase-based outdoor monitoring applications.

Validation of EVM Method for Filter Test Using Butterworth and Chebyshev Filters

The error vector magnitude (EVM), used generally to quantify digital communication performances, will be used in this paper in order to test RF device performances. This RF test particularly developed for industries will respond to time and cost-reduction requirements. The method is based on the simplest digital modulation, quadrature phase-shift keying modulation on an RF carrier frequency. Primary results based on this method have been obtained using Butterworth and Chebyshev RF filters. In this work we improve the sensitivity of the EVM parameter to filter characteristics as the center frequency, the bandwidth, the insertions losses, and the ripples in the passband. Simulations with ADS Ptolemy and measurements are done for both filter types with the aim of defining their EVM signatures in the passband.