Rajasekhar M. Rao

Active spectral control of DUV light sources for OPE minimization

The variation of CD with pitch, or Optical Proximity Effect (OPE), in an imaging system shows a behavior that is characteristic of the imaging and process conditions and is sensitive to variations in those conditions. Maintaining stable process conditions can improve the effectiveness of mask Optical Proximity Correction (OPC). One of the factors which affects the OPE is the spectral bandwidth of the light source. To date, passive bandwidth stabilization techniques have been effective in meeting OPE control requirements. However, future tighter OPE specifications will require advanced bandwidth control techniques. This paper describes developments in active stabilization of bandwidth in Cymer XLA and 7010 lasers. State of the art on board metrology, used to accurately measure E95 bandwidth, has enabled a new array of active control solutions to be deployed. Advanced spectral engineering techniques, including sophisticated control algorithms, are used to stabilize and regulate the bandwidth of the light source while maintaining other key performance specifications.

Advanced light source technologies that enable high-volume manufacturing of DUV lithography extensions

Deep UV (DUV) lithography is being applied to pattern increasingly finer geometries, leading to solutions like double- and multiple-patterning. Such process complexities lead to higher costs due to the increasing number of steps required to produce the desired results. One of the consequences is that the lithography equipment needs to provide higher operating efficiencies to minimize the cost increases, especially for producers of memory devices that experience a rapid decline in sales prices of these products over time. In addition to having introduced higher power 193nm light sources to enable higher throughput, we previously described technologies that also enable: higher tool availability via advanced discharge chamber gas management algorithms; improved process monitoring via enhanced on-board beam metrology; and increased depth of focus (DOF) via light source bandwidth modulation. In this paper we will report on the field performance of these technologies with data that supports the desired improvements in on-wafer performance and operational efficiencies.

Enabling high volume manufacturing of double patterning immersion lithography with the XLR 600ix ArF light source

Deep ultraviolet (DUV) lithography improvements have been focused on two paths: further increases in the effective numerical aperture (NA) beyond 1.3, and double patterning (DP). High-index solutions for increasing the effective NA have not gained significant momentum due to several technical factors, and have been eclipsed by an aggressive push to make DP a high-volume manufacturing solution. The challenge is to develop a cost-effective solution using a process that effectively doubles the lithography steps required for critical layers, while achieving a higher degree of overlay performance. As a result, the light source requirements for DP fall into 3 main categories: (a) higher power to enable higher throughput on the scanner, (b) lower operating costs to offset the increased number of process steps, and (c) high stability of optical parameters to support more stringent process requirements. The XLR 600i (6kHz, 90W @15mJ) was introduced last year to enable DP by leveraging the higher performance and lower operating costs of the ring architecture XLR 500i (6kHz, 60W @10mJ) platform currently used for 45nm immersion lithography in production around the world. In February 2009, the XLR 600ix was introduced as a 60/90W switchable product to provide flexibility in the transition to higher power requirements as scanner capabilities are enhanced. The XLR 600ix includes improved optics materials to meet reliability requirements while operating at higher internal fluences. In this paper we will illustrate the performance characteristics during extended testing. Examples of performance include polarization stability, divergence and pointing stability, which enable consistent pupil fill under extreme illumination conditions, as well as overall thermal stability which maintains constant beam performance under large changes in laser operating modes. Furthermore, the unique beam uniformity characteristics that the ring architecture generates result in lower peak energy densities that are comparable to those of a typical 60W excimer laser. In combination with the XLRs long pulse duration, this allows for long life scanner optics while operating at 15mJ.