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Featured researches published by John T. Melchior.


Proceedings of SPIE | 2012

Advanced light source technologies that enable high-volume manufacturing of DUV lithography extensions

Theodore Cacouris; Rajasekhar M. Rao; Rostislav Rokitski; Rui Jiang; John T. Melchior; Bernd Burfeindt; Kevin O'Brien

Deep UV (DUV) lithography is being applied to pattern increasingly finer geometries, leading to solutions like double- and multiple-patterning. Such process complexities lead to higher costs due to the increasing number of steps required to produce the desired results. One of the consequences is that the lithography equipment needs to provide higher operating efficiencies to minimize the cost increases, especially for producers of memory devices that experience a rapid decline in sales prices of these products over time. In addition to having introduced higher power 193nm light sources to enable higher throughput, we previously described technologies that also enable: higher tool availability via advanced discharge chamber gas management algorithms; improved process monitoring via enhanced on-board beam metrology; and increased depth of focus (DOF) via light source bandwidth modulation. In this paper we will report on the field performance of these technologies with data that supports the desired improvements in on-wafer performance and operational efficiencies.


Proceedings of SPIE | 2013

High power 120W ArF immersion XLR laser system for high dose applications

Rostislav Rokitski; Robert J. Rafac; John T. Melchior; R. Dubi; Joshua Thornes; Theodore Cacouris; Mary Haviland; Daniel J. W. Brown

Demand for increased semiconductor device performance at low cost continues to drive the requirements for shrinking the geometry of features printed on silicon wafers. Argon fluoride (ArF) excimer laser systems operating at 193 nm and producing high output power played a key role in patterning of the most advanced features for high volume deep ultraviolet (DUV) lithography over the last decade. Lithographic patterning has progressed from ArF dry to ArF immersion (ArFi) to double and multiple patterning applications, with increasingly tight requirements for the quality of light at 193 nm and improved system reliability. This drove the transition from single chamber laser systems to dual chamber systems with ring cavity amplifier architectures. We are presenting a flexible 90-120W ArFi excimer laser system, developed for high volume multiple patterning manufacturing as well as 450mm wafer applications. Light source design is based on dual-chamber architecture with ring cavity power amplifier.


Archive | 2003

High power deep ultraviolet laser with long life optics

Thomas A. Yager; William N. Partlo; Richard L. Sandstrom; Xiaojiang Pan; John T. Melchior; John M Algots; Matthew Ball; Alexander I. Ershov; Vladimir B. Fleurov; Walter D. Gillespie; Holger K. Glatzel; Leonard Lublin; Elizabeth Marsh; Richard G. Morton; Richard C. Ujazdowski; David J. Warkentin; R. Webb


Archive | 2001

Gas discharge laser with improved beam path

William N. Partlo; Richard L. Sandstrom; Holzer K. Glatzel; Raymond F. Cybulski; Peter C. Newman; James K. Howey; William G. Hulburd; John T. Melchior; Alex P. Ivaschenko


Archive | 2003

Gas discharge ultraviolet wavemeter with enhanced illumination

Richard L. Sandstrom; John T. Melchior; Rajasekhar M. Rao


Archive | 2003

Gas discharge mopa laser spectral analysis module

Rajasekhar M. Rao; John T. Melchior; Holger K. Glatzel


Archive | 2000

Wavemeter for gas discharge laser

Peter C. Newman; John T. Melchior; Richard L. Sandstrom


Archive | 2007

Blister resistant optical coatings

John T. Melchior


Archive | 2008

Window assembly for a gas discharge laser chamber

John T. Melchior; Richard C. Ujazdowski; James K. Howey


Archive | 2007

Gas discharge laser system

Thomas Hofmann; Jean-Marc Hueber; Palach P. Das; Toshihiko Ishihara; Thomas P. Duffey; John T. Melchior; Herve A. Besaucele; Richard G. Morton; Richard M. Ness; Peter C. Newman; William N. Partlo; Daniel A. Rothweil; Richard L. Sandstrom

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