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Dive into the research topics where Robert Mulfinger is active.

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Featured researches published by Robert Mulfinger.


Archive | 2009

DOUBLE GATE AND TRI-GATE TRANSISTOR FORMED ON A BULK SUBSTRATE AND METHOD FOR FORMING THE TRANSISTOR

Andy Wei; Robert Mulfinger; Thilo Scheiper; Thorsten Kammler


Archive | 2009

Method for forming double gate and tri-gate transistors on a bulk substrate

Andy Wei; Robert Mulfinger; Thilo Scheiper; Thorsten Kammler


Archive | 2009

CMOS DEVICE COMPRISING NMOS TRANSISTORS AND PMOS TRANSISTORS HAVING INCREASED STRAIN-INDUCING SOURCES AND CLOSELY SPACED METAL SILICIDE REGIONS

Jan Hoentschel; Robert Mulfinger; Uwe Griebenow


Archive | 2009

MULTIPLE GATE TRANSISTOR HAVING FINS WITH A LENGTH DEFINED BY THE GATE ELECTRODE

Robert Mulfinger; Andy Wei; Jan Hoentschel; Andrew Waite


Archive | 2009

TRANSISTOR WITH EMBEDDED SI/GE MATERIAL HAVING ENHANCED ACROSS-SUBSTRATE UNIFORMITY

Robert Mulfinger; Andy Wei; Jan Hoentschel; Casey Scott


Archive | 2010

Mehr-Gatetransistor mit Stegen mit einer Länge, die durch die Gateelektrode definiert ist

Robert Mulfinger; Andy Wei; Jan Hoentschel; Andrew Waite


Archive | 2008

Verfahren zur Herstellung eines Halbleiterbauelements als Mehr-Gatetransistor mit Stegen mit einer Länge, die durch die Gateelektrode definiert ist und Halbleiterbauelement

Jan Hoentschel; Robert Mulfinger; Andrew Waite; Andy Wei


Archive | 2009

Semiconductor device i.e. integrated circuit, manufacturing method for e.g. microprocessor, involves removing part of deformation inducing layer from above transistor under application of dielectric layer as etch-stopping material

Roman Boschke; Robert Mulfinger; Casey Scott; Andy Wei


Archive | 2010

Transistorbauelement mit einer asymmetrischen eingebetteten Halbleiterlegierung und Herstellungsverfahren dafür

Vassilios Papageorgiou; Jan Hoetschel; Robert Mulfinger; Casey Scott


Archive | 2010

Transistor mit eingebettetem Si/Ge-Material mit einer besseren substratüberspannenden Gleichmäßigkeit

Robert Mulfinger; Andy Wei; Jan Hoentschel; Casey Scott

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Casey Scott

Advanced Micro Devices

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