Romain Delhougne

Progress in the physical modeling of carrier illumination

Carrier illumination is an optical, fast, and nondestructive technique for an ultrashallow complementary metal oxide semiconductor structure characterization based on the measurement of differential probe laser reflectivity changes, which originate from refractive index variations induced by excess carriers generated by a second modulated pump laser. By changing the pump laser power it is possible to influence the depth of the main internal reflection and thus to sense the shape of the underlying electrically active profile. The extraction of the latter is, however, critically dependent on our in-depth physical understanding of the underlying processes. In this work, recent progress will be discussed with respect to the improved physical modeling of the generation-recombination processes (SRH, Auger, indirect phonon absorption, and free carrier absorption), mobilities, impact of temperature (heating by the lasers), and influence of slow surface state traps (time dependent behavior). In order to quantify t...

Study of Surface Roughness and Dislocation Generation in Strained Si Layers Grown on Thin Strain-Relaxed Buffers for High Performance MOSFETs

In this work, the impact of high temperature annealing typical of CMOS processing on the surface morphology of thin SiGe SRBs is investigated for strained silicon layers above and below the critical thickness