Shashank S. Ekbote
Texas Instruments
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Publication
Featured researches published by Shashank S. Ekbote.
IEEE Electron Device Letters | 2011
Youn Sung Choi; Shashank S. Ekbote; Greg C. Baldwin
A new approach to channel mobility engineering using strained-Si technology is described with a complete data analysis. It is discussed that [110]/(100) Si channel mobility in p-MOSFET with embedded SiGe source/drain and compressive stress liner can be strongly dependent on pocket implant dose, resulting from a change in piezoresistance coefficient as a function of p-type carrier dopant concentration in the vicinity of the channel, whereas channel mobility of n-MOSFETs shows weaker dependence on pocket implant dose due to: 1) smaller piezoresistance coefficient of n-channel and 2) less channel strain relative to p-MOSFETs.
Archive | 2005
Haowen Bu; Shashank S. Ekbote; Rajesh Khamankar; Shaoping Tang; Freidoon Mehrad
Archive | 2010
Borna Obradovic; Shashank S. Ekbote; Mark R. Visokay
Archive | 2007
Borna Obradovic; Shashank S. Ekbote
Archive | 2005
Sarah Liu; Greg C. Baldwin; Haowen Bu; Shashank S. Ekbote
Archive | 2007
Borna Obradovic; Shashank S. Ekbote
Archive | 2005
Richard P. Rouse; Shashank S. Ekbote; Haowen Bu
Archive | 2002
Freidoon Mehrad; Zhihao Chen; Shashank S. Ekbote; Brian M. Trentman
Archive | 2012
Song Zhao; Gregory Charles Baldwin; Shashank S. Ekbote; Youn Sung Choi
Archive | 2007
Haowen Bu; Shashank S. Ekbote; Juanita Deloach
