Sheng-Huei Dai

Highly scalable ballistic injection AND-type (BiAND) flash memory

An AND-type split-gate Flash memory cell with a trench select gate and a buried n/sup +/ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5F/sup 2/. Furthermore, both the programming speed and the read current are enhanced by the shared select gate configuration.

Leakage Suppression of Low-Voltage Transient Voltage Suppressor

In modern electronics, as the supply voltage decreases, the protection devices for low-voltage application are gaining more importance. In this paper, two types of diode-based transient voltage suppressors are proposed for protection against electrical overstress and electrostatic discharges. The modified diodes show lower leakage under low-voltage and sharp I-V transition after breakdown by only a few modifications on the fabrication process.

Comprehensively Study on a Ballistic-Injection AND-type Flash Memory Cell

In this paper, a novel ballistic-injection AND-type (BiAND) split gate flash memory, with a trench select gate and buried n+ source is proposed. The ballistic source side injection (BSSI) programming mechanism is performed and realized in a contactless AND array, which features high programming efficiency, 10-3–10-4 and small cell size of 5 F2. In addition, both the programming speed and read current is enhanced by the shared select gate structure. The BiAND flash memory is thus promising for low-voltage, high efficient, fast speed, scalable and high reliability non-volatile memory applications.

Lateral Back-to-Back Diode for Low-Capacitance Transient Voltage Suppressor

In this paper, a transient voltage suppressor (TVS) using a native lateral back-to-back diode structure in conventional complementary metal?oxide?semiconductor (CMOS) technology is proposed. The capacitance, direct-current (DC) current?voltage (I?V) characteristics, and transmission line pulse (TLP) I?V characteristics of this lateral back-to-back diode are investigated. An optimization guideline for the lateral device is presented. The lateral structure is also suitable for the advanced wafer-level chip-scale package (WL-CSP) technology to meet the low capacitance and small footprint requirement for high-frequency or handheld device applications. This is a simple solution for a low-capacitance and low breakdown-voltage protection device against electrostatic discharge and electrical overstress in discrete or on-chip applications.

Low-Capacitance Low-Voltage Transient Voltage Suppressor Using Diode-Activated SiGe Heterojunction Bipolar Transistor in SiGe Heterojunction Bipolar Transistor Bipolar Complementary Metal–Oxide–Semiconductor Process

In this paper, a transient voltage suppressor using a diode-activated SiGe heterojunction bipolar transistor (HBT) is proposed. The capacitance, DC current–voltage (I–V) characteristics, and transmission line pulse (TLP) I–V characteristics of this combination device are investigated. An optimization guideline of the combination device is presented, verified by the corresponding simulation results, and a simple and effective method for achieving the target breakdown voltage is demonstrated. By combining the diode and SiGe HBT, the new structure exhibits both a low capacitance and a low breakdown voltage for protection against electrostatic discharge and electrical overstress in discrete or on-chip applications.

Low voltage Transient Voltage Suppressor with v-groove structure

Transient voltage suppressor (TVS) with v-groove structure is an off-chip device designed for protecting integrated circuits against electrostatic discharge (ESD) and electrical overstress (EOS). Compared with planar diodes, v-groove diodes provide much lower breakdown voltage under the same doping conditions. By selective etching using TMAH, the new TVS can be realized with well controlled v-groove tip angle and simple fabrication process. This new structure can be a low-cost, low breakdown voltage, and low capacitance solution for next generation TVS devices.

Leakage Suppression of Low Voltage Transient Voltage Suppressor

In this work, both the blanket implanted and LOCOS diodes have obvious effect on reducing the electric field at junction edge. The leakage at low biased voltage is lowered. The LOCOS diode further enhances sharpness of I-V characteristics. Besides, no extra lithography process is needed for the process of the LOCOS diodes. The LOCOS diodes would be a simple, low cost, and effective method for improving the performance of low voltage transient suppressor